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Paper Abstract and Keywords
Presentation 2018-04-20 13:50
[Invited Talk] Memory LSI using crystalline oxide semiconductor FET
Jun Koyama, Takako Seki, Yuto Yakubo, Satoru Ohshita, Kazuma Furutani, Takahiko Ishizu, Tomoaki Atsumi, Yoshinori Ando, Daisuke Matsubayashi, Kiyoshi Kato, Takashi Okuda (SEL), Masahiro Fujita (The Univ. of Tokyo), Shunpei Yamazaki (SEL) ICD2018-12
Abstract (in Japanese) (See Japanese page) 
(in English) FETs fabricated with a c-axis aligned crystalline In-Ga-Zn oxide semiconductor (CAAC-IGZO) have an extremely low off-state current of 6 yA/m at 85C. Use of this FET enables memory circuits with extremely low power consumption. SEL has developed a 1kbit n-channel only memory module including dynamic logic circuits using a 60nm crystalline oxide semiconductor fabrication technology. This memory module achieves write pulse width and read access time of 20 ns and 45 ns, respectively, at VDD  3.3 V. The write and read energies are 97.9 pJ and 123.6 pJ, respectively, and it endures 1014 write cycles.
Keyword (in Japanese) (See Japanese page) 
(in English) Crystalline Oxide Semiconductor / CAAC-IGZO / off-state current / n-channel only memory module / dynamic logic circuits / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 10, ICD2018-12, pp. 47-52, April 2018.
Paper # ICD2018-12 
Date of Issue 2018-04-12 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ICD  
Conference Date 2018-04-19 - 2018-04-20 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2018-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Memory LSI using crystalline oxide semiconductor FET 
Sub Title (in English)  
Keyword(1) Crystalline Oxide Semiconductor  
Keyword(2) CAAC-IGZO  
Keyword(3) off-state current  
Keyword(4) n-channel only memory module  
Keyword(5) dynamic logic circuits  
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1st Author's Name Jun Koyama  
1st Author's Affiliation Semiconductor Energy Laboratory (SEL)
2nd Author's Name Takako Seki  
2nd Author's Affiliation Semiconductor Energy Laboratory (SEL)
3rd Author's Name Yuto Yakubo  
3rd Author's Affiliation Semiconductor Energy Laboratory (SEL)
4th Author's Name Satoru Ohshita  
4th Author's Affiliation Semiconductor Energy Laboratory (SEL)
5th Author's Name Kazuma Furutani  
5th Author's Affiliation Semiconductor Energy Laboratory (SEL)
6th Author's Name Takahiko Ishizu  
6th Author's Affiliation Semiconductor Energy Laboratory (SEL)
7th Author's Name Tomoaki Atsumi  
7th Author's Affiliation Semiconductor Energy Laboratory (SEL)
8th Author's Name Yoshinori Ando  
8th Author's Affiliation Semiconductor Energy Laboratory (SEL)
9th Author's Name Daisuke Matsubayashi  
9th Author's Affiliation Semiconductor Energy Laboratory (SEL)
10th Author's Name Kiyoshi Kato  
10th Author's Affiliation Semiconductor Energy Laboratory (SEL)
11th Author's Name Takashi Okuda  
11th Author's Affiliation Semiconductor Energy Laboratory (SEL)
12th Author's Name Masahiro Fujita  
12th Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
13th Author's Name Shunpei Yamazaki  
13th Author's Affiliation Semiconductor Energy Laboratory (SEL)
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Speaker Author-1 
Date Time 2018-04-20 13:50:00 
Presentation Time 50 minutes 
Registration for ICD 
Paper # ICD2018-12 
Volume (vol) vol.118 
Number (no) no.10 
Page pp.47-52 
#Pages 6 
Date of Issue 2018-04-12 (ICD) 

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