| Paper Abstract and Keywords |
| Presentation |
2018-04-27 14:50
S-band Tx Module with Cu Pillar Interconnection Si/GaN 3D Chip Embedding Substrate Kengo Kawasaki, Eigo Kuwata, Hidenori Ishibashi, Tomohiro Yao, Kiyoshi Ishida, Kazuhiro Maeda, Hironobu Shibata, Masaomi Tsuru, Kazutomi Mori, Mitsuhiro Shimozawa, Hiroshi Fukumoto (Mitsubishi Electric Corp.) WPT2018-5 MW2018-5 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
A SiGe chip and GaN chip packaged Tx module in S-band is represented. SiGe and GaN with Redistribution Layer (RDL) are integrated in 3D package. A chip embedding substrate is adopted and the GaN chip consisting of a power amplifier is embedded in the substrate. SiGe chip consisting a phase shifter and a variable gain amplifier is flip-chip bonded on the GaN chip embedded substrate. The package area of the Tx module is 7mm by 7mm. The measured RMS phase error rate of 1.3 degree and RMS amplitude error rate of 0.31dB are obtained in S-band, respectively. The maximum output power of 32dBm is achieved in S-band. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Package / Cu Pillar / Chip embedding substrate / MMIC / SiGe HBT / GaN HEMT / Tx module / |
| Reference Info. |
IEICE Tech. Rep., vol. 118, no. 18, MW2018-5, pp. 19-23, April 2018. |
| Paper # |
MW2018-5 |
| Date of Issue |
2018-04-20 (WPT, MW) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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WPT2018-5 MW2018-5 |