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| Presentation | 2018-06-25 11:20 Comparative study of SiO2/GaN interface structures and properties between Ar and He as a mixture gas with oxygen for remote plasma chemical vapor deposition Nguyen Xuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST-NU GaN-OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST-NU GaN-OIL), Mitsuhisa Ikeda, Makihara Katsunori (Nagoya Univ.), Mitsuaki Shimizu (AIST-NU GaN-OIL), Seiichi Miyazaki (Nagoya Univ.)  SDM2018-17 Link to ES Tech. Rep. Archives: SDM2018-17 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | (Not available yet) | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | / / / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 110, SDM2018-17, pp. 5-9, June 2018. | |
| Paper # | SDM2018-17 | |
| Date of Issue | 2018-06-18 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2018-17 Link to ES Tech. Rep. Archives: SDM2018-17 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2018-06-25 - 2018-06-25 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. VBL3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2018-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Comparative study of SiO2/GaN interface structures and properties between Ar and He as a mixture gas with oxygen for remote plasma chemical vapor deposition |
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| 1st Author's Name | Nguyen Xuan Truyen |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Noriyuki Taoka |
| 2nd Author's Affiliation | AIST-NU GaN-OIL (AIST-NU GaN-OIL) |
| 3rd Author's Name | Akio Ohta |
| 3rd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 4th Author's Name | Hisashi Yamada |
| 4th Author's Affiliation | AIST-NU GaN-OIL (AIST-NU GaN-OIL) |
| 5th Author's Name | Tokio Takahashi |
| 5th Author's Affiliation | AIST-NU GaN-OIL (AIST-NU GaN-OIL) |
| 6th Author's Name | Mitsuhisa Ikeda |
| 6th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 7th Author's Name | Makihara Katsunori |
| 7th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 8th Author's Name | Mitsuaki Shimizu |
| 8th Author's Affiliation | AIST-NU GaN-OIL (AIST-NU GaN-OIL) |
| 9th Author's Name | Seiichi Miyazaki |
| 9th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-2 |
| Date Time | 2018-06-25 11:20:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2018-17 |
| Volume (vol) | vol.118 |
| Number (no) | no.110 |
| Page | pp.5-9 |
| #Pages | 5 |
| Date of Issue | 2018-06-18 (SDM) |
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