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Paper Abstract and Keywords
Presentation 2018-06-25 11:40
Control of SiO2/GaN Interface for High-performance GaN MOSFET
Tauji Hosoi, Takahiro Yamada, Mikito Nozaki (Osaka Univ.), Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu (AIST), Akitaka Yoshigoe (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2018-18
Abstract (in Japanese) (See Japanese page) 
(in English) A high-quality gate insulator together with low interface states is indispensable for GaN-based power MOSFETs. We have recently reported low interface state density of GaOx/GaN structures formed by thermal oxidation or sputter deposition, while surface morphology of GaOx layer was concerned. In this work, plasma-enhanced CVD-deposition of SiO2 films on GaN surface forming GaOx interlayers was carried out. Although the fabricated SiO2/GaOx/GaN structures with post-deposition annealing exhibited low interface state densities, Ga diffusion into SiO2 layers severely degraded the insulating properties. We also demonstrated that the PDA based on rapid thermal processing is beneficial in suppressing Ga diffusion, leading to high-quality interface together with superior insulating property.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / SiO2 / MOS devices / interface / reliability / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 110, SDM2018-18, pp. 11-14, June 2018.
Paper # SDM2018-18 
Date of Issue 2018-06-18 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2018-18

Conference Information
Committee SDM  
Conference Date 2018-06-25 - 2018-06-25 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Univ. VBL3F 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2018-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Control of SiO2/GaN Interface for High-performance GaN MOSFET 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) SiO2  
Keyword(3) MOS devices  
Keyword(4) interface  
Keyword(5) reliability  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Tauji Hosoi  
1st Author's Affiliation Osaka Unviersity (Osaka Univ.)
2nd Author's Name Takahiro Yamada  
2nd Author's Affiliation Osaka Unviersity (Osaka Univ.)
3rd Author's Name Mikito Nozaki  
3rd Author's Affiliation Osaka Unviersity (Osaka Univ.)
4th Author's Name Tokio Takahashi  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Hisashi Yamada  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Mitsuaki Shimizu  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
7th Author's Name Akitaka Yoshigoe  
7th Author's Affiliation Japan Atomic Energy Agency (JAEA)
8th Author's Name Takayoshi Shimura  
8th Author's Affiliation Osaka Unviersity (Osaka Univ.)
9th Author's Name Heiji Watanabe  
9th Author's Affiliation Osaka Unviersity (Osaka Univ.)
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Speaker Author-1 
Date Time 2018-06-25 11:40:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2018-18 
Volume (vol) vol.118 
Number (no) no.110 
Page pp.11-14 
#Pages 4 
Date of Issue 2018-06-18 (SDM) 

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