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| Presentation | 2018-06-25 11:40 Control of SiO2/GaN Interface for High-performance GaN MOSFET Tauji Hosoi, Takahiro Yamada, Mikito Nozaki (Osaka Univ.), Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu (AIST), Akitaka Yoshigoe (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)  SDM2018-18 Link to ES Tech. Rep. Archives: SDM2018-18 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A high-quality gate insulator together with low interface states is indispensable for GaN-based power MOSFETs. We have recently reported low interface state density of GaOx/GaN structures formed by thermal oxidation or sputter deposition, while surface morphology of GaOx layer was concerned. In this work, plasma-enhanced CVD-deposition of SiO2 films on GaN surface forming GaOx interlayers was carried out. Although the fabricated SiO2/GaOx/GaN structures with post-deposition annealing exhibited low interface state densities, Ga diffusion into SiO2 layers severely degraded the insulating properties. We also demonstrated that the PDA based on rapid thermal processing is beneficial in suppressing Ga diffusion, leading to high-quality interface together with superior insulating property. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / SiO2 / MOS devices / interface / reliability / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 110, SDM2018-18, pp. 11-14, June 2018. | |
| Paper # | SDM2018-18 | |
| Date of Issue | 2018-06-18 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2018-18 Link to ES Tech. Rep. Archives: SDM2018-18 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2018-06-25 - 2018-06-25 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. VBL3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2018-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Control of SiO2/GaN Interface for High-performance GaN MOSFET |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | SiO2 |
| Keyword(3) | MOS devices |
| Keyword(4) | interface |
| Keyword(5) | reliability |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Tauji Hosoi |
| 1st Author's Affiliation | Osaka Unviersity (Osaka Univ.) |
| 2nd Author's Name | Takahiro Yamada |
| 2nd Author's Affiliation | Osaka Unviersity (Osaka Univ.) |
| 3rd Author's Name | Mikito Nozaki |
| 3rd Author's Affiliation | Osaka Unviersity (Osaka Univ.) |
| 4th Author's Name | Tokio Takahashi |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 5th Author's Name | Hisashi Yamada |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 6th Author's Name | Mitsuaki Shimizu |
| 6th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 7th Author's Name | Akitaka Yoshigoe |
| 7th Author's Affiliation | Japan Atomic Energy Agency (JAEA) |
| 8th Author's Name | Takayoshi Shimura |
| 8th Author's Affiliation | Osaka Unviersity (Osaka Univ.) |
| 9th Author's Name | Heiji Watanabe |
| 9th Author's Affiliation | Osaka Unviersity (Osaka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2018-06-25 11:40:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2018-18 |
| Volume (vol) | vol.118 |
| Number (no) | no.110 |
| Page | pp.11-14 |
| #Pages | 4 |
| Date of Issue | 2018-06-18 (SDM) |
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