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| Presentation | 2018-08-07 13:40 [Invited Talk] Fabrication and Characterization of SOI-CMOS Using Minimal-Fab and Mega-Fab Hybrid Process Yongxun Liu, Hiroyuki Tanaka (AIST), Kazuhiro Koga, Kazushige Sato (MINIMAL), Sommawan Khumpuang, Masayoshi Nagao, Takashi Matsukawa, Shiro Hara (AIST)  SDM2018-30 ICD2018-17 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this work, gate-last and gate-first SOI-CMOS integrated circuits have been successfully fabricated on the minimal wafer (diameter = 12.5 mm) by using the developed minimal-fab and mega-fab hybrid process, and the normal operations of the fabricated SOI-CMOS and 1k-trnsisitor level CMOS integrated circuits have been confirmed. Moreover, as the CMOS-MEMS integrated device, the CMOS ring oscillator has been fabricated on a thin SOI diaphragm and the change of oscillation frequency has been confirmed before and after the diaphragm formation due to the residual mechanical stress. These results indicate that logic gate CMOS-IC and CMOS-MEMS devices can be fabricated using the developed minimal-fab process. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Minimal-fab / SOI-CMOS / MEMS / Diaphragm / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 172, SDM2018-30, pp. 25-30, Aug. 2018. | |
| Paper # | SDM2018-30 | |
| Date of Issue | 2018-07-31 (SDM, ICD) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2018-30 ICD2018-17 |
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| Conference Information | |
| Committee | SDM ICD ITE-IST |
| Conference Date | 2018-08-07 - 2018-08-09 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido Univ., Graduate School of IST M Bldg., M151 |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2018-08-SDM-ICD-IST |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and Characterization of SOI-CMOS Using Minimal-Fab and Mega-Fab Hybrid Process |
| Sub Title (in English) | |
| Keyword(1) | Minimal-fab |
| Keyword(2) | SOI-CMOS |
| Keyword(3) | MEMS |
| Keyword(4) | Diaphragm |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yongxun Liu |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) (AIST) |
| 2nd Author's Name | Hiroyuki Tanaka |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) (AIST) |
| 3rd Author's Name | Kazuhiro Koga |
| 3rd Author's Affiliation | Minimal Fab General Incorporated Association (MINIMAL) |
| 4th Author's Name | Kazushige Sato |
| 4th Author's Affiliation | Minimal Fab General Incorporated Association (MINIMAL) |
| 5th Author's Name | Sommawan Khumpuang |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) (AIST) |
| 6th Author's Name | Masayoshi Nagao |
| 6th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) (AIST) |
| 7th Author's Name | Takashi Matsukawa |
| 7th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) (AIST) |
| 8th Author's Name | Shiro Hara |
| 8th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) (AIST) |
| 9th Author's Name | |
| 9th Author's Affiliation | () |
| 10th Author's Name | |
| 10th Author's Affiliation | () |
| 11th Author's Name | |
| 11th Author's Affiliation | () |
| 12th Author's Name | |
| 12th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2018-08-07 13:40:00 |
| Presentation Time | 45 minutes |
| Registration for | SDM |
| Paper # | SDM2018-30, ICD2018-17 |
| Volume (vol) | vol.118 |
| Number (no) | no.172(SDM), no.173(ICD) |
| Page | pp.25-30 |
| #Pages | 6 |
| Date of Issue | 2018-07-31 (SDM, ICD) |
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