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Paper Abstract and Keywords
Presentation 2018-08-07 12:55
[Invited Talk] Development of SiGe-MEMS-on-CMOS technology for ultra-low-power inertial sensors
Hideyuki Tomizawa, Yoshihiko Kurui (Toshiba), Ippei Akita (AIST), Akira Fujimoto, Tomohiro Saito, Akihiro Kojima, Hideki Shibata (Toshiba) SDM2018-29 ICD2018-16
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, for the first time we demonstrate the material benefits of SiGe for MEMS applications based on the results of fabricated devices. To achieve SiGe inertial MEMS, we develop the deposition process for thick, low-temperature poly-SiGe film with which film stress is controlled precisely, and fabricate SiGe accelerometers having 20µm thickness. We clarify that the SiGe accelerometer shows higher sensor sensitivity and lower power consumption compared to Si one and is thus suitable for future ultra-low-power sensors.
Keyword (in Japanese) (See Japanese page) 
(in English) IoT / Ultra-low-power Sensors / MEMS-on-CMOS / poly-SiGe / Accelerometer / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 172, SDM2018-29, pp. 21-24, Aug. 2018.
Paper # SDM2018-29 
Date of Issue 2018-07-31 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2018-29 ICD2018-16

Conference Information
Committee SDM ICD ITE-IST  
Conference Date 2018-08-07 - 2018-08-09 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ., Graduate School of IST M Bldg., M151 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications 
Paper Information
Registration To SDM 
Conference Code 2018-08-SDM-ICD-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of SiGe-MEMS-on-CMOS technology for ultra-low-power inertial sensors 
Sub Title (in English)  
Keyword(1) IoT  
Keyword(2) Ultra-low-power Sensors  
Keyword(3) MEMS-on-CMOS  
Keyword(4) poly-SiGe  
Keyword(5) Accelerometer  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hideyuki Tomizawa  
1st Author's Affiliation Toshiba Corporation (Toshiba)
2nd Author's Name Yoshihiko Kurui  
2nd Author's Affiliation Toshiba Corporation (Toshiba)
3rd Author's Name Ippei Akita  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Akira Fujimoto  
4th Author's Affiliation Toshiba Corporation (Toshiba)
5th Author's Name Tomohiro Saito  
5th Author's Affiliation Toshiba Corporation (Toshiba)
6th Author's Name Akihiro Kojima  
6th Author's Affiliation Toshiba Corporation (Toshiba)
7th Author's Name Hideki Shibata  
7th Author's Affiliation Toshiba Corporation (Toshiba)
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Speaker Author-1 
Date Time 2018-08-07 12:55:00 
Presentation Time 45 minutes 
Registration for SDM 
Paper # SDM2018-29, ICD2018-16 
Volume (vol) vol.118 
Number (no) no.172(SDM), no.173(ICD) 
Page pp.21-24 
#Pages 4 
Date of Issue 2018-07-31 (SDM, ICD) 

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