Paper Abstract and Keywords |
Presentation |
2018-08-07 12:55
[Invited Talk]
Development of SiGe-MEMS-on-CMOS technology for ultra-low-power inertial sensors Hideyuki Tomizawa, Yoshihiko Kurui (Toshiba), Ippei Akita (AIST), Akira Fujimoto, Tomohiro Saito, Akihiro Kojima, Hideki Shibata (Toshiba) SDM2018-29 ICD2018-16 Link to ES Tech. Rep. Archives: SDM2018-29 ICD2018-16 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this paper, for the first time we demonstrate the material benefits of SiGe for MEMS applications based on the results of fabricated devices. To achieve SiGe inertial MEMS, we develop the deposition process for thick, low-temperature poly-SiGe film with which film stress is controlled precisely, and fabricate SiGe accelerometers having 20µm thickness. We clarify that the SiGe accelerometer shows higher sensor sensitivity and lower power consumption compared to Si one and is thus suitable for future ultra-low-power sensors. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
IoT / Ultra-low-power Sensors / MEMS-on-CMOS / poly-SiGe / Accelerometer / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 172, SDM2018-29, pp. 21-24, Aug. 2018. |
Paper # |
SDM2018-29 |
Date of Issue |
2018-07-31 (SDM, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2018-29 ICD2018-16 Link to ES Tech. Rep. Archives: SDM2018-29 ICD2018-16 |
Conference Information |
Committee |
SDM ICD ITE-IST |
Conference Date |
2018-08-07 - 2018-08-09 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Hokkaido Univ., Graduate School of IST M Bldg., M151 |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
Paper Information |
Registration To |
SDM |
Conference Code |
2018-08-SDM-ICD-IST |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Development of SiGe-MEMS-on-CMOS technology for ultra-low-power inertial sensors |
Sub Title (in English) |
|
Keyword(1) |
IoT |
Keyword(2) |
Ultra-low-power Sensors |
Keyword(3) |
MEMS-on-CMOS |
Keyword(4) |
poly-SiGe |
Keyword(5) |
Accelerometer |
Keyword(6) |
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Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Hideyuki Tomizawa |
1st Author's Affiliation |
Toshiba Corporation (Toshiba) |
2nd Author's Name |
Yoshihiko Kurui |
2nd Author's Affiliation |
Toshiba Corporation (Toshiba) |
3rd Author's Name |
Ippei Akita |
3rd Author's Affiliation |
National Institute of Advanced Industrial Science and Technology (AIST) |
4th Author's Name |
Akira Fujimoto |
4th Author's Affiliation |
Toshiba Corporation (Toshiba) |
5th Author's Name |
Tomohiro Saito |
5th Author's Affiliation |
Toshiba Corporation (Toshiba) |
6th Author's Name |
Akihiro Kojima |
6th Author's Affiliation |
Toshiba Corporation (Toshiba) |
7th Author's Name |
Hideki Shibata |
7th Author's Affiliation |
Toshiba Corporation (Toshiba) |
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Speaker |
Author-1 |
Date Time |
2018-08-07 12:55:00 |
Presentation Time |
45 minutes |
Registration for |
SDM |
Paper # |
SDM2018-29, ICD2018-16 |
Volume (vol) |
vol.118 |
Number (no) |
no.172(SDM), no.173(ICD) |
Page |
pp.21-24 |
#Pages |
4 |
Date of Issue |
2018-07-31 (SDM, ICD) |
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