Paper Abstract and Keywords |
Presentation |
2018-10-17 15:20
Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating Kaname Imokawa (Kyushu Univ), Nozomu Tanaka (Kyushu Univ.), Akira Suwa (Kyushu Univ), Daisuke Nakamura, Taizoh Sadoh (Kyushu Univ.), Tetsuya Goto (New Industry Creation Hatchery Center, Tohoku Univ.), Hiroshi Ikenoue (Kyushu Univ) SDM2018-54 Link to ES Tech. Rep. Archives: SDM2018-54 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
There are some issues in printable Si TFT processes. In particlular, formation of ormic contact of silicon TFT requiers ion implantation and high temperature (~500 ℃) annealing processes. We reported about KrF excimer laser doping with a phosphoric acid coating as low-temperature process. In this paper, we report a formation of ormic contact using this method. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Low-temperature poly-Si / Thin-film-transistor / Excimer laser doping / Phosphoric acid coating / Contact resistivity / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 241, SDM2018-54, pp. 11-14, Oct. 2018. |
Paper # |
SDM2018-54 |
Date of Issue |
2018-10-10 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2018-54 Link to ES Tech. Rep. Archives: SDM2018-54 |
|