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| Presentation | 2018-10-18 16:35 GaN HEMT Darlington Power Amplifier with Individual Bias Adjustment for High-Efficiency and Low-Distortion Characteristics Atsushi Kitamura, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC)  EMCJ2018-45 MW2018-81 EST2018-67 Link to ES Tech. Rep. Archives: MW2018-81 EST2018-67 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Multi-transistor configurations are widely applied for improving the performance of transistor amplifiers. In the multi-transistor configuration, it is possible to cancel the nonlinearity of each transistor by adjusting the gate bias, so linearity can be improved. In this research, we have fabricated and evaluated an independent-bias-type GaN HEMT Darlington power amplifier to achieve both low distortion and high efficiency in a wide dynamic range of a power amplifier. By individually adjusting the gate bias voltages in the Darlington amplifier, a third order intermodulation distortion (IMD3) is suppressed. Moreover, by adjusting the drain bias voltages, a power added efficiency (PAE) was improved without affecting to IMD3. The fabricated GaN HEMT Darlington power amplifier exhibited a PAE of 36% and an IMD3 of $-$35,dBc with an output power of 30,dBm at 1.45,GHz. A high quality 64-QAM constellation has been retained for an output power range from 20 to 32,dBm. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Darlington / GaN HEMT / power amplifier / high efficiency / low distortion / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 248, MW2018-81, pp. 71-75, Oct. 2018. | |
| Paper # | MW2018-81 | |
| Date of Issue | 2018-10-11 (EMCJ, MW, EST) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EMCJ2018-45 MW2018-81 EST2018-67 Link to ES Tech. Rep. Archives: MW2018-81 EST2018-67 |
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| Conference Information | |
| Committee | EST MW EMCJ IEE-EMC |
| Conference Date | 2018-10-18 - 2018-10-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hachinohe Chamber of Commerce and Industry(Hachinohe city, Aomori) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Simulation techniques, EMC, Microwave, Electromagnetic field simulation, etc. |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2018-10-EST-MW-EMCJ-EMC |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaN HEMT Darlington Power Amplifier with Individual Bias Adjustment for High-Efficiency and Low-Distortion Characteristics |
| Sub Title (in English) | |
| Keyword(1) | Darlington |
| Keyword(2) | GaN HEMT |
| Keyword(3) | power amplifier |
| Keyword(4) | high efficiency |
| Keyword(5) | low distortion |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Atsushi Kitamura |
| 1st Author's Affiliation | The University of Electro-Communications (UEC) |
| 2nd Author's Name | Yoichiro Takayama |
| 2nd Author's Affiliation | The University of Electro-Communications (UEC) |
| 3rd Author's Name | Ryo Ishikawa |
| 3rd Author's Affiliation | The University of Electro-Communications (UEC) |
| 4th Author's Name | Kazuhiko Honjo |
| 4th Author's Affiliation | The University of Electro-Communications (UEC) |
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| Speaker | Author-1 |
| Date Time | 2018-10-18 16:35:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | EMCJ2018-45, MW2018-81, EST2018-67 |
| Volume (vol) | vol.118 |
| Number (no) | no.247(EMCJ), no.248(MW), no.249(EST) |
| Page | pp.71-75 |
| #Pages | 5 |
| Date of Issue | 2018-10-11 (EMCJ, MW, EST) |
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