Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2018-10-24 14:25
Effects of discharge gas species (Ar, Kr) on fabrication of Spindt type emitter cathode using high power pulsed magnetron sputtering
Hyuga Taniguchi, Kei Oya, Takeo Nakano (Seikei Univ.), Masayoshi Nagao, Hisashi Ohsaki, Katsuhisa Murakami (AIST) ED2018-27
Abstract (in Japanese) (See Japanese page) 
(in English) Spindt-type emitter is one of the vacuum electron sources prepared by semiconductor manufacturing technologies. On its fabrication, microcavities with a hole on their ceiling are prepared on a Si substrate, and an emitter material (e.g. Mo) is deposited through the hole inside of the cavity. Conventionally, the emitter cathode material has been deposited by using vacuum evaporation. This method, however, has difficulties in large area manufacturing and requires substrate heating to alleviate the tensile stress in the deposited films. In this study, we applied a high power pulsed magnetron sputtering (HPPMS) technique which can ionize the depositing particles and can control their direction and incidence energy. We have demonstrated the Mo emitter preparation at room temperature, but the reversed (compressive) stress frequently resulted in the delamination of the coatings and hindered the stable production of the device. In this study, we used Kr as a discharge gas to suppress the compressive stress of Mo films and compared the results with those prepared by conventional Ar gases. In addition, we applied various negative substrate voltages and investigated its effect on the film stress and the emitter structure.
Keyword (in Japanese) (See Japanese page) 
(in English) Spindt-type emitter / HPPMS / Substrate voltage / Internal stress / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 263, ED2018-27, pp. 5-8, Oct. 2018.
Paper # ED2018-27 
Date of Issue 2018-10-17 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2018-27

Conference Information
Committee ED  
Conference Date 2018-10-24 - 2018-10-24 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2018-10-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of discharge gas species (Ar, Kr) on fabrication of Spindt type emitter cathode using high power pulsed magnetron sputtering 
Sub Title (in English)  
Keyword(1) Spindt-type emitter  
Keyword(2) HPPMS  
Keyword(3) Substrate voltage  
Keyword(4) Internal stress  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hyuga Taniguchi  
1st Author's Affiliation Seikei University (Seikei Univ.)
2nd Author's Name Kei Oya  
2nd Author's Affiliation Seikei University (Seikei Univ.)
3rd Author's Name Takeo Nakano  
3rd Author's Affiliation Seikei University (Seikei Univ.)
4th Author's Name Masayoshi Nagao  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Hisashi Ohsaki  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Katsuhisa Murakami  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2018-10-24 14:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2018-27 
Volume (vol) vol.118 
Number (no) no.263 
Page pp.5-8 
#Pages
Date of Issue 2018-10-17 (ED) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan