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| Presentation | 2018-11-29 14:15 Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing Yosuke Kajiwara, Aya Shindome, Toshiki Hikosaka, Masahiko Kuraguchi (Toshiba Corp.), Akira Yoshioka (Toshiba Electronic Device & Storage Corp.), Shinya Nunoue (Toshiba Corp.)  ED2018-35 CPM2018-69 LQE2018-89 Link to ES Tech. Rep. Archives: ED2018-35 CPM2018-69 LQE2018-89 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In the previous work, we studied on the channel mobility in the Normally-off recessed GaN-based metal-oxide-semiconductor field effect transistors (GaN-MOSFETs) and fabricated the GaN-MOSFET with improved channel mobility. The fabricated GaN-MOSFET is introduced the two processes: the long-time gate-dielectric SiO2 annealing after the deposition for the reducing charge-trap density in the SiO2 and the surface treatment under NH3 ambient after the recess etching process for removing the etching damage. From the analysis using the theoretical model based on Matthiessen’s rule, we show that the improvement of the channel mobility is achieved by reduction of the interface-trap density and suppression of Coulomb scattering in MOS-channel. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | MOS-GaN power device / recess / channel mobility / SiO2 / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 330, ED2018-35, pp. 13-16, Nov. 2018. | |
| Paper # | ED2018-35 | |
| Date of Issue | 2018-11-22 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2018-35 CPM2018-69 LQE2018-89 Link to ES Tech. Rep. Archives: ED2018-35 CPM2018-69 LQE2018-89 |
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| Conference Information | |
| Committee | ED LQE CPM |
| Conference Date | 2018-11-29 - 2018-11-30 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2018-11-ED-LQE-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement of channel mobility in GaN-MOS structure by surface treatment of recessed-GaN and dielectric SiO2 annealing |
| Sub Title (in English) | |
| Keyword(1) | MOS-GaN power device |
| Keyword(2) | recess |
| Keyword(3) | channel mobility |
| Keyword(4) | SiO2 |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yosuke Kajiwara |
| 1st Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 2nd Author's Name | Aya Shindome |
| 2nd Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 3rd Author's Name | Toshiki Hikosaka |
| 3rd Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 4th Author's Name | Masahiko Kuraguchi |
| 4th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
| 5th Author's Name | Akira Yoshioka |
| 5th Author's Affiliation | Toshiba Electronic Device & Storage Corporation (Toshiba Electronic Device & Storage Corp.) |
| 6th Author's Name | Shinya Nunoue |
| 6th Author's Affiliation | Toshiba Corporation (Toshiba Corp.) |
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| Speaker | Author-1 |
| Date Time | 2018-11-29 14:15:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2018-35, CPM2018-69, LQE2018-89 |
| Volume (vol) | vol.118 |
| Number (no) | no.330(ED), no.331(CPM), no.332(LQE) |
| Page | pp.13-16 |
| #Pages | 4 |
| Date of Issue | 2018-11-22 (ED, CPM, LQE) |
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