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Paper Abstract and Keywords
Presentation 2018-11-29 16:30
Fabrication of FeSxOy thin film by tartaric acid added three-step pulse electrochemical deposition and fabrication of ZnO/FeSxOy heterojunction solar cell
Wen Ji, Masaya Ichimura (NIT) ED2018-40 CPM2018-74 LQE2018-94
Abstract (in Japanese) (See Japanese page) 
(in English) FeS2 is a p-type semiconductor with a narrow band gap and thus is regarded as a good absorber in a heterojunction solar cell. Semi-transparent FeSxOy thin films were deposited by three-step pulse electrochemical deposition (ECD) method. The deposited film contained considerable amount of oxygen and thus was labeled "FeSxOy". In this work, we try to control oxygen content in the FeSxOy thin films by adding tartaric acid as a complexing agent in the deposition solution. The O/Fe ratio is reduced from 1.19 to 0.24 by adding 50 mM tartaric acid. p-type conductivity was confirmed by the photoelectrochemical measurement. ZnO is an n-type semiconductor having a band gap of about 3.2 eV. We fabricate a ZnO / FeSxOy heterojunction by ECD and observe rectification properties.
Keyword (in Japanese) (See Japanese page) 
(in English) FeS2 / ZnO / Tartaric Acid / Electrochemical Deposition / Solar cell / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 331, CPM2018-74, pp. 35-39, Nov. 2018.
Paper # CPM2018-74 
Date of Issue 2018-11-22 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2018-40 CPM2018-74 LQE2018-94

Conference Information
Committee ED LQE CPM  
Conference Date 2018-11-29 - 2018-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Inst. tech. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To CPM 
Conference Code 2018-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of FeSxOy thin film by tartaric acid added three-step pulse electrochemical deposition and fabrication of ZnO/FeSxOy heterojunction solar cell 
Sub Title (in English)  
Keyword(1) FeS2  
Keyword(2) ZnO  
Keyword(3) Tartaric Acid  
Keyword(4) Electrochemical Deposition  
Keyword(5) Solar cell  
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1st Author's Name Wen Ji  
1st Author's Affiliation Nagoya Institute of Technology (NIT)
2nd Author's Name Masaya Ichimura  
2nd Author's Affiliation Nagoya Institute of Technology (NIT)
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Speaker Author-1 
Date Time 2018-11-29 16:30:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # ED2018-40, CPM2018-74, LQE2018-94 
Volume (vol) vol.118 
Number (no) no.330(ED), no.331(CPM), no.332(LQE) 
Page pp.35-39 
#Pages 5 
Date of Issue 2018-11-22 (ED, CPM, LQE) 

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