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Paper Abstract and Keywords
Presentation 2018-11-30 09:00
A 2.5-kV-breakdown-voltage AlGaN-channel HFET with a strain-controlled AlGaInN barrier layer
Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. of Tech.) ED2018-41 CPM2018-75 LQE2018-95
Abstract (in Japanese) (See Japanese page) 
(in English) Novel AlGaN-channel heterostructures employing quaternary AlGaInN barriers were grown by metalorganic chemical vapor deposition, and their structural and electrical characteristics were evaluated. The structural characterizations confirmed that a sample with an In-rich barrier layer exhibited a small in-plane strain in the barrier layer and crack-free smooth surface morphology. The strain-controlled AlGaInN/AlGaN heterostructure showed an excellent thermal stability in its 2DEG properties even at high temperature up to 900°C. In addition, a fabricated MIS-HFET device exhibited good pinch-off characteristics with a contact resistance of 10.5 Ωmm. Furthermore, an extremely high off-state breakdown voltage of approximately 2.5 kV was obtained for the device.
Keyword (in Japanese) (See Japanese page) 
(in English) Power device / AlGaN-channel HFET / MOCVD / AlGaInN / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 330, ED2018-41, pp. 41-44, Nov. 2018.
Paper # ED2018-41 
Date of Issue 2018-11-22 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2018-41 CPM2018-75 LQE2018-95

Conference Information
Committee ED LQE CPM  
Conference Date 2018-11-29 - 2018-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Inst. tech. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To ED 
Conference Code 2018-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 2.5-kV-breakdown-voltage AlGaN-channel HFET with a strain-controlled AlGaInN barrier layer 
Sub Title (in English)  
Keyword(1) Power device  
Keyword(2) AlGaN-channel HFET  
Keyword(3) MOCVD  
Keyword(4) AlGaInN  
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1st Author's Name Daiki Hosomi  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
2nd Author's Name Keita Furuoka  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
3rd Author's Name Heng Chen  
3rd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
4th Author's Name Saki Saito  
4th Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
5th Author's Name Toshiharu Kubo  
5th Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
6th Author's Name Takashi Egawa  
6th Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
7th Author's Name Makoto Miyoshi  
7th Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
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Speaker Author-1 
Date Time 2018-11-30 09:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2018-41, CPM2018-75, LQE2018-95 
Volume (vol) vol.118 
Number (no) no.330(ED), no.331(CPM), no.332(LQE) 
Page pp.41-44 
#Pages 4 
Date of Issue 2018-11-22 (ED, CPM, LQE) 

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