| Paper Abstract and Keywords |
| Presentation |
2018-12-06 17:10
High optical coupling efficiency by double taper-type coupler structure towards III-V/Si hybrid photonic integration Takehiko Kikuchi (SEI/Tokyo Tech.), Junichi Suzuki, Fumihito Tachibana (Tokyo Tech.), Naoko Inoue, Hideki Yagi (SEI), Moataz Eissa, Takuya Mitarai, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech.) OPE2018-129 LQE2018-139 SIPH2018-45 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
The hybrid integration utilizing III-V based active devices with Si-Photonics is very attractive to realize new-generation photonic integrated circuits (PICs) with a small-footprint, high-speed response, and low power dissipation. GaInAsP/ Silicon-On-Insulator (SOI) hybrid photonic integrations have been realized using N2 plasma activated bonding (PAB) processes. In addition, high optical coupling efficiency between the InP-based active section and Si-waveguides is a key issue for the realization of high-performance photonic devices. High optical coupling efficiency between them of 86% was realized by using the i-line stepper lithography process. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
III-V/Si hybrid integration / Double taper-type coupler structure / Plasma activated bonding / InP / Si-Photonics / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 118, no. 348, OPE2018-129, pp. 161-164, Dec. 2018. |
| Paper # |
OPE2018-129 |
| Date of Issue |
2018-11-29 (OPE, LQE, SIPH) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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| Download PDF |
OPE2018-129 LQE2018-139 SIPH2018-45 |