Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2018-12-06 17:10
High optical coupling efficiency by double taper-type coupler structure towards III-V/Si hybrid photonic integration
Takehiko Kikuchi (SEI/Tokyo Tech.), Junichi Suzuki, Fumihito Tachibana (Tokyo Tech.), Naoko Inoue, Hideki Yagi (SEI), Moataz Eissa, Takuya Mitarai, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech.) OPE2018-129 LQE2018-139 SIPH2018-45
Abstract (in Japanese) (See Japanese page) 
(in English) The hybrid integration utilizing III-V based active devices with Si-Photonics is very attractive to realize new-generation photonic integrated circuits (PICs) with a small-footprint, high-speed response, and low power dissipation. GaInAsP/ Silicon-On-Insulator (SOI) hybrid photonic integrations have been realized using N2 plasma activated bonding (PAB) processes. In addition, high optical coupling efficiency between the InP-based active section and Si-waveguides is a key issue for the realization of high-performance photonic devices. High optical coupling efficiency between them of 86% was realized by using the i-line stepper lithography process.
Keyword (in Japanese) (See Japanese page) 
(in English) III-V/Si hybrid integration / Double taper-type coupler structure / Plasma activated bonding / InP / Si-Photonics / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 348, OPE2018-129, pp. 161-164, Dec. 2018.
Paper # OPE2018-129 
Date of Issue 2018-11-29 (OPE, LQE, SIPH) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OPE2018-129 LQE2018-139 SIPH2018-45

Conference Information
Committee LQE OPE SIPH  
Conference Date 2018-12-06 - 2018-12-07 
Place (in Japanese) (See Japanese page) 
Place (in English) Keio University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Photonic Device Workshop 
Paper Information
Registration To OPE 
Conference Code 2018-12-LQE-OPE-SIPH 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High optical coupling efficiency by double taper-type coupler structure towards III-V/Si hybrid photonic integration 
Sub Title (in English)  
Keyword(1) III-V/Si hybrid integration  
Keyword(2) Double taper-type coupler structure  
Keyword(3) Plasma activated bonding  
Keyword(4) InP  
Keyword(5) Si-Photonics  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Takehiko Kikuchi  
1st Author's Affiliation Sumitomo Electric Industries, Ltd./Tokyo Institute of Technology (SEI/Tokyo Tech.)
2nd Author's Name Junichi Suzuki  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
3rd Author's Name Fumihito Tachibana  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
4th Author's Name Naoko Inoue  
4th Author's Affiliation Sumitomo Electric Industries, Ltd. (SEI)
5th Author's Name Hideki Yagi  
5th Author's Affiliation Sumitomo Electric Industries, Ltd. (SEI)
6th Author's Name Moataz Eissa  
6th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
7th Author's Name Takuya Mitarai  
7th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
8th Author's Name Tomohiro Amemiya  
8th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
9th Author's Name Nobuhiko Nishiyama  
9th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
10th Author's Name Shigehisa Arai  
10th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2018-12-06 17:10:00 
Presentation Time 80 minutes 
Registration for OPE 
Paper # OPE2018-129, LQE2018-139, SIPH2018-45 
Volume (vol) vol.118 
Number (no) no.348(OPE), no.349(LQE) 
Page pp.161-164 
#Pages 4 
Date of Issue 2018-11-29 (OPE, LQE, SIPH) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan