Paper Abstract and Keywords |
Presentation |
2018-12-18 11:35
Crystal growth of 2D-layered semiconductor MoS2 by novel friction induced method Takafumi Ito, Tadao Tanabe, Yutaka Oyama (Tohoku Univ.) ED2018-67 Link to ES Tech. Rep. Archives: ED2018-67 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
As a new film formation technology for semiconductor crystals in semiconductor device processes, we have proposed a simple process utilizing friction. By the process, we fabricate molybdenum disulfide (MoS2) crystal. Since MoS2 can be applied to a channel of a field effect transistor (FET) and can be formed to be extremely thin one molecule layer, operation with higher speed and lower power consumption than silicon is expected. In this research, we aimed to form a MoS2 thin film of semiconductor device size, and aimed to study a substrate suitable for MoS2 generation. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
MoS2 / Crystal growth / Thin film / friction / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 368, ED2018-67, pp. 53-56, Dec. 2018. |
Paper # |
ED2018-67 |
Date of Issue |
2018-12-10 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2018-67 Link to ES Tech. Rep. Archives: ED2018-67 |
Conference Information |
Committee |
ED THz |
Conference Date |
2018-12-17 - 2018-12-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
RIEC, Tohoku Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Millimeter-wave, terahertz-wave devices and systems |
Paper Information |
Registration To |
ED |
Conference Code |
2018-12-ED-THz |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Crystal growth of 2D-layered semiconductor MoS2 by novel friction induced method |
Sub Title (in English) |
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MoS2 |
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Crystal growth |
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Thin film |
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friction |
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1st Author's Name |
Takafumi Ito |
1st Author's Affiliation |
Tohoku University (Tohoku Univ.) |
2nd Author's Name |
Tadao Tanabe |
2nd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
3rd Author's Name |
Yutaka Oyama |
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Tohoku University (Tohoku Univ.) |
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Speaker |
Author-1 |
Date Time |
2018-12-18 11:35:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2018-67 |
Volume (vol) |
vol.118 |
Number (no) |
no.368 |
Page |
pp.53-56 |
#Pages |
4 |
Date of Issue |
2018-12-10 (ED) |
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