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Paper Abstract and Keywords
Presentation 2018-12-18 11:35
Crystal growth of 2D-layered semiconductor MoS2 by novel friction induced method
Takafumi Ito, Tadao Tanabe, Yutaka Oyama (Tohoku Univ.) ED2018-67
Abstract (in Japanese) (See Japanese page) 
(in English) As a new film formation technology for semiconductor crystals in semiconductor device processes, we have proposed a simple process utilizing friction. By the process, we fabricate molybdenum disulfide (MoS2) crystal. Since MoS2 can be applied to a channel of a field effect transistor (FET) and can be formed to be extremely thin one molecule layer, operation with higher speed and lower power consumption than silicon is expected. In this research, we aimed to form a MoS2 thin film of semiconductor device size, and aimed to study a substrate suitable for MoS2 generation.
Keyword (in Japanese) (See Japanese page) 
(in English) MoS2 / Crystal growth / Thin film / friction / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 368, ED2018-67, pp. 53-56, Dec. 2018.
Paper # ED2018-67 
Date of Issue 2018-12-10 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2018-67

Conference Information
Committee ED THz  
Conference Date 2018-12-17 - 2018-12-18 
Place (in Japanese) (See Japanese page) 
Place (in English) RIEC, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter-wave, terahertz-wave devices and systems 
Paper Information
Registration To ED 
Conference Code 2018-12-ED-THz 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Crystal growth of 2D-layered semiconductor MoS2 by novel friction induced method 
Sub Title (in English)  
Keyword(1) MoS2  
Keyword(2) Crystal growth  
Keyword(3) Thin film  
Keyword(4) friction  
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1st Author's Name Takafumi Ito  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Tadao Tanabe  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Yutaka Oyama  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2018-12-18 11:35:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2018-67 
Volume (vol) vol.118 
Number (no) no.368 
Page pp.53-56 
#Pages 4 
Date of Issue 2018-12-10 (ED) 

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