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Paper Abstract and Keywords
Presentation 2019-01-18 11:15
InGaN quantum well tunable single-mode semiconductor lasers with deeply-etched periodic structures
Masahiro Uemukai, So Kusumoto, Daiki Tazuke (Osaka Univ.), Jumpei Tajima, Toshiki Hikosaka, Shinya Nunoue (Toshiba), Ryuji Katayama (Osaka Univ.) PN2018-76 EMT2018-110 OPE2018-185 LQE2018-195 EST2018-123 MWP2018-94
Abstract (in Japanese) (See Japanese page) 
(in English) Nitride semiconductors such as GaN and AlN have strong optical nonlinearity and can be applied to wavelength conversion devices. 200-nm band deep UV light and 800-nm band squeezed light can be obtained from such devices pumped by 400-nm band InGaN QW single-mode lasers. The single-mode lasers with deeply etched periodic structure can be fabricated by simple process without high-resolution EB lithography and epitaxial regrowth. By current injection to the periodic structures, wavelength tuning can be expected. In this work, we design two types of InGaN tunable single-mode lasers and report their fabrication process.
Keyword (in Japanese) (See Japanese page) 
(in English) Semiconductor lasers / Wavelength tuning / Single-mode lasers / DBR lasers / Slotted lasers / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 399, LQE2018-195, pp. 243-246, Jan. 2019.
Paper # LQE2018-195 
Date of Issue 2019-01-10 (PN, EMT, OPE, LQE, EST, MWP) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF PN2018-76 EMT2018-110 OPE2018-185 LQE2018-195 EST2018-123 MWP2018-94

Conference Information
Committee PN EMT OPE EST MWP LQE IEE-EMT  
Conference Date 2019-01-17 - 2019-01-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka University Nakanoshima Center 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2019-01-PN-EMT-OPE-EST-MWP-LQE-EMT 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) InGaN quantum well tunable single-mode semiconductor lasers with deeply-etched periodic structures 
Sub Title (in English)  
Keyword(1) Semiconductor lasers  
Keyword(2) Wavelength tuning  
Keyword(3) Single-mode lasers  
Keyword(4) DBR lasers  
Keyword(5) Slotted lasers  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Masahiro Uemukai  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name So Kusumoto  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Daiki Tazuke  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Jumpei Tajima  
4th Author's Affiliation Toshiba Corporation (Toshiba)
5th Author's Name Toshiki Hikosaka  
5th Author's Affiliation Toshiba Corporation (Toshiba)
6th Author's Name Shinya Nunoue  
6th Author's Affiliation Toshiba Corporation (Toshiba)
7th Author's Name Ryuji Katayama  
7th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker Author-1 
Date Time 2019-01-18 11:15:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # PN2018-76, EMT2018-110, OPE2018-185, LQE2018-195, EST2018-123, MWP2018-94 
Volume (vol) vol.118 
Number (no) no.396(PN), no.397(EMT), no.398(OPE), no.399(LQE), no.400(EST), no.401(MWP) 
Page pp.243-246 
#Pages 4 
Date of Issue 2019-01-10 (PN, EMT, OPE, LQE, EST, MWP) 

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