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| Presentation | 2019-01-29 15:40 [Invited Talk] Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (GRIK), Yohichiroh Numasawa (Meiji Univ.), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai, Wataru Saito (Toshiba Electronic Devices & Storage), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Tech), Toshiro Hiramoto (Univ. of Tokyo)  SDM2018-90 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Functional trench-gated 1200V-10A class Si-IGBTs, designed based on the scaling concept, were fabricated, and 5V gate voltage switching operation has been demonstrated for the first time. 33% reduction of turn-off loss and 100mV improvement of on-state voltage were achieved, while keeping 1.2kV forward blocking voltage. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Power Device / IGBT / Injection Enhancement / Scaling / Switching Loss / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 429, SDM2018-90, pp. 39-44, Jan. 2019. | |
| Paper # | SDM2018-90 | |
| Date of Issue | 2019-01-22 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2018-90 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2019-01-29 - 2019-01-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2019-01-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss |
| Sub Title (in English) | |
| Keyword(1) | Power Device |
| Keyword(2) | IGBT |
| Keyword(3) | Injection Enhancement |
| Keyword(4) | Scaling |
| Keyword(5) | Switching Loss |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takuya Saraya |
| 1st Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 2nd Author's Name | Kazuo Itou |
| 2nd Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 3rd Author's Name | Toshihiko Takakura |
| 3rd Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 4th Author's Name | Munetoshi Fukui |
| 4th Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 5th Author's Name | Shinichi Suzuki |
| 5th Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 6th Author's Name | Kiyoshi Takeuchi |
| 6th Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| 7th Author's Name | Masanori Tsukuda |
| 7th Author's Affiliation | Green Electronics Research Institute, Kitakyushu (GRIK) |
| 8th Author's Name | Yohichiroh Numasawa |
| 8th Author's Affiliation | Meiji University (Meiji Univ.) |
| 9th Author's Name | Katsumi Satoh |
| 9th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 10th Author's Name | Tomoko Matsudai |
| 10th Author's Affiliation | Toshiba Electronic Devices & Storage Corporation (Toshiba Electronic Devices & Storage) |
| 11th Author's Name | Wataru Saito |
| 11th Author's Affiliation | Toshiba Electronic Devices & Storage Corporation (Toshiba Electronic Devices & Storage) |
| 12th Author's Name | Kuniyuki Kakushima |
| 12th Author's Affiliation | Tokyo Inst. of Technology (Tokyo Tech) |
| 13th Author's Name | Takuya Hoshii |
| 13th Author's Affiliation | Tokyo Inst. of Technology (Tokyo Tech) |
| 14th Author's Name | Kazuyoshi Furukawa |
| 14th Author's Affiliation | Tokyo Inst. of Technology (Tokyo Tech) |
| 15th Author's Name | Masahiro Watanabe |
| 15th Author's Affiliation | Tokyo Inst. of Technology (Tokyo Tech) |
| 16th Author's Name | Naoyuki Shigyo |
| 16th Author's Affiliation | Tokyo Inst. of Technology (Tokyo Tech) |
| 17th Author's Name | Kazuo Tsutsui |
| 17th Author's Affiliation | Tokyo Inst. of Technology (Tokyo Tech) |
| 18th Author's Name | Hiroshi Iwai |
| 18th Author's Affiliation | Tokyo Inst. of Technology (Tokyo Tech) |
| 19th Author's Name | Atsushi Ogura |
| 19th Author's Affiliation | Meiji University (Meiji Univ.) |
| 20th Author's Name | Shin-ichi Nishizawa |
| 20th Author's Affiliation | Kyushu University (Kyushu Univ.) |
| 21st Author's Name | Ichiro Omura |
| 21st Author's Affiliation | Kyushu Institute of Technology (Kyushu Inst. of Tech.) |
| 22nd Author's Name | Hiromichi Ohashi |
| 22nd Author's Affiliation | Tokyo Inst. of Technology (Tokyo Tech) |
| 23rd Author's Name | Toshiro Hiramoto |
| 23rd Author's Affiliation | University of Tokyo (Univ. of Tokyo) |
| Speaker | Author-1 |
| Date Time | 2019-01-29 15:40:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2018-90 |
| Volume (vol) | vol.118 |
| Number (no) | no.429 |
| Page | pp.39-44 |
| #Pages | 6 |
| Date of Issue | 2019-01-22 (SDM) |
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