Paper Abstract and Keywords |
Presentation |
2019-01-29 15:40
[Invited Talk]
Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (GRIK), Yohichiroh Numasawa (Meiji Univ.), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai, Wataru Saito (Toshiba Electronic Devices & Storage), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Tech), Toshiro Hiramoto (Univ. of Tokyo) SDM2018-90 Link to ES Tech. Rep. Archives: SDM2018-90 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Functional trench-gated 1200V-10A class Si-IGBTs, designed based on the scaling concept, were fabricated, and 5V gate voltage switching operation has been demonstrated for the first time. 33% reduction of turn-off loss and 100mV improvement of on-state voltage were achieved, while keeping 1.2kV forward blocking voltage. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Power Device / IGBT / Injection Enhancement / Scaling / Switching Loss / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 429, SDM2018-90, pp. 39-44, Jan. 2019. |
Paper # |
SDM2018-90 |
Date of Issue |
2019-01-22 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
SDM2018-90 Link to ES Tech. Rep. Archives: SDM2018-90 |
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