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Paper Abstract and Keywords
Presentation 2019-05-17 14:40
Dielectric Constant Change of Silicon Substrate after H/He Ion Irradiation for Loss Reduction
Takuichi Hirano (Tokyo City Univ.), Maya Mizuno (NICT), Ning Li (Sophia Univ.), Takeshi Inoue, Masatsugu Sogabe (SHI-ATEX), Kenichi Okada (Tokyo Tech.) EST2019-5
Abstract (in Japanese) (See Japanese page) 
(in English) The hydrogen (H) or helium (He) ion irradiation on a silicon (Si) substrate had been proposed to reduce loss in high frequency electromagnetic fields. It was confirmed by measurement that the Q factor of on-chip spiral inductor can increase and gain of on-chip antenna can reduce because the conductivity of silicon substrate decreases by ion irradiation. Although the change of the conductivity of Si by ion irradiation was investigated, the change of dielectric constant has not been investigated. The change of dielectric constant of Si by ion irradiation was measured by terahertz time-domain spectroscopy system in this paper. The measured dielectric constant of Si was changed from 11.80 (before ion irradiation) to 11.34 after ion irradiation. The measured frequency characteristic of reflection coefficient with measured dielectric constant in the simulation agrees well with measured one.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon / Ion Irradiation / Dielectric Constant Measurement / Terahertz Time-Domain Spectroscopy / Millimeter-Wave / On-Chip Antenna / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 42, EST2019-5, pp. 19-23, May 2019.
Paper # EST2019-5 
Date of Issue 2019-05-10 (EST) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EST2019-5

Conference Information
Committee EST  
Conference Date 2019-05-17 - 2019-05-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Inst. Tech. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Simulation techniques, etc. 
Paper Information
Registration To EST 
Conference Code 2019-05-EST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Dielectric Constant Change of Silicon Substrate after H/He Ion Irradiation for Loss Reduction 
Sub Title (in English)  
Keyword(1) Silicon  
Keyword(2) Ion Irradiation  
Keyword(3) Dielectric Constant Measurement  
Keyword(4) Terahertz Time-Domain Spectroscopy  
Keyword(5) Millimeter-Wave  
Keyword(6) On-Chip Antenna  
Keyword(7)  
Keyword(8)  
1st Author's Name Takuichi Hirano  
1st Author's Affiliation Tokyo City University (Tokyo City Univ.)
2nd Author's Name Maya Mizuno  
2nd Author's Affiliation National Institute of Information and Communications Technology (NICT)
3rd Author's Name Ning Li  
3rd Author's Affiliation Sophia University (Sophia Univ.)
4th Author's Name Takeshi Inoue  
4th Author's Affiliation SHI-ATEX Co.,Ltd. (SHI-ATEX)
5th Author's Name Masatsugu Sogabe  
5th Author's Affiliation SHI-ATEX Co.,Ltd. (SHI-ATEX)
6th Author's Name Kenichi Okada  
6th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
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Speaker Author-1 
Date Time 2019-05-17 14:40:00 
Presentation Time 25 minutes 
Registration for EST 
Paper # EST2019-5 
Volume (vol) vol.119 
Number (no) no.42 
Page pp.19-23 
#Pages 5 
Date of Issue 2019-05-10 (EST) 

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