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| Presentation | 2019-05-17 14:40 Dielectric Constant Change of Silicon Substrate after H/He Ion Irradiation for Loss Reduction Takuichi Hirano (Tokyo City Univ.), Maya Mizuno (NICT), Ning Li (Sophia Univ.), Takeshi Inoue, Masatsugu Sogabe (SHI-ATEX), Kenichi Okada (Tokyo Tech.)  EST2019-5 Link to ES Tech. Rep. Archives: EST2019-5 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The hydrogen (H) or helium (He) ion irradiation on a silicon (Si) substrate had been proposed to reduce loss in high frequency electromagnetic fields. It was confirmed by measurement that the Q factor of on-chip spiral inductor can increase and gain of on-chip antenna can reduce because the conductivity of silicon substrate decreases by ion irradiation. Although the change of the conductivity of Si by ion irradiation was investigated, the change of dielectric constant has not been investigated. The change of dielectric constant of Si by ion irradiation was measured by terahertz time-domain spectroscopy system in this paper. The measured dielectric constant of Si was changed from 11.80 (before ion irradiation) to 11.34 after ion irradiation. The measured frequency characteristic of reflection coefficient with measured dielectric constant in the simulation agrees well with measured one. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Silicon / Ion Irradiation / Dielectric Constant Measurement / Terahertz Time-Domain Spectroscopy / Millimeter-Wave / On-Chip Antenna / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 42, EST2019-5, pp. 19-23, May 2019. | |
| Paper # | EST2019-5 | |
| Date of Issue | 2019-05-10 (EST) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EST2019-5 Link to ES Tech. Rep. Archives: EST2019-5 |
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| Conference Information | |
| Committee | EST |
| Conference Date | 2019-05-17 - 2019-05-17 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. Tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Simulation techniques, etc. |
| Paper Information | |
| Registration To | EST |
| Conference Code | 2019-05-EST |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Dielectric Constant Change of Silicon Substrate after H/He Ion Irradiation for Loss Reduction |
| Sub Title (in English) | |
| Keyword(1) | Silicon |
| Keyword(2) | Ion Irradiation |
| Keyword(3) | Dielectric Constant Measurement |
| Keyword(4) | Terahertz Time-Domain Spectroscopy |
| Keyword(5) | Millimeter-Wave |
| Keyword(6) | On-Chip Antenna |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takuichi Hirano |
| 1st Author's Affiliation | Tokyo City University (Tokyo City Univ.) |
| 2nd Author's Name | Maya Mizuno |
| 2nd Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 3rd Author's Name | Ning Li |
| 3rd Author's Affiliation | Sophia University (Sophia Univ.) |
| 4th Author's Name | Takeshi Inoue |
| 4th Author's Affiliation | SHI-ATEX Co.,Ltd. (SHI-ATEX) |
| 5th Author's Name | Masatsugu Sogabe |
| 5th Author's Affiliation | SHI-ATEX Co.,Ltd. (SHI-ATEX) |
| 6th Author's Name | Kenichi Okada |
| 6th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech.) |
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| Speaker | Author-1 |
| Date Time | 2019-05-17 14:40:00 |
| Presentation Time | 25 minutes |
| Registration for | EST |
| Paper # | EST2019-5 |
| Volume (vol) | vol.119 |
| Number (no) | no.42 |
| Page | pp.19-23 |
| #Pages | 5 |
| Date of Issue | 2019-05-10 (EST) |
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