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Paper Abstract and Keywords
Presentation 2019-08-07 14:15
TCAD analysis of the fringe-field effect on transfer characteristics of 2D channel FET
Hidehiro Asai, Wen Hsin Chang, Naoya Okada, Koich Fukuda, Toshifumi Irisawa (AIST) SDM2019-37 ICD2019-2
Abstract (in Japanese) (See Japanese page) 
(in English) Layered transition metal dichalcogenides (TMDCs) have attracted much attention as promising 2D channel
materials which realize ultra-scaling of MOSFET transistors. However, a high contact resistance between a 2D channel and an
electrode has been one of critical issue for the application of the 2D channel FET, and the contact resistance becomes significantly
large for the channels of several monolayer thickness. In this paper, we have numerically investigated the transfer characteristics
of the 2D channel FETs and clarified the fringe-filed effect on the contact resistance in ultra-thin channel FETs.
Keyword (in Japanese) (See Japanese page) 
(in English) 2D channel FET / Contact resistance / Fringe field / TCAD simulation / / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 161, SDM2019-37, pp. 7-10, Aug. 2019.
Paper # SDM2019-37 
Date of Issue 2019-07-31 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2019-37 ICD2019-2

Conference Information
Committee SDM ICD ITE-IST  
Conference Date 2019-08-07 - 2019-08-09 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ., Graduate School /Faculty of Information Science and 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications 
Paper Information
Registration To SDM 
Conference Code 2019-08-SDM-ICD-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) TCAD analysis of the fringe-field effect on transfer characteristics of 2D channel FET 
Sub Title (in English)  
Keyword(1) 2D channel FET  
Keyword(2) Contact resistance  
Keyword(3) Fringe field  
Keyword(4) TCAD simulation  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hidehiro Asai  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Wen Hsin Chang  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Naoya Okada  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Koich Fukuda  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Toshifumi Irisawa  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker Author-1 
Date Time 2019-08-07 14:15:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2019-37, ICD2019-2 
Volume (vol) vol.119 
Number (no) no.161(SDM), no.162(ICD) 
Page pp.7-10 
#Pages 4 
Date of Issue 2019-07-31 (SDM, ICD) 

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