Paper Abstract and Keywords |
Presentation |
2019-08-09 10:15
Fabrication and electrical characteristics of amorphous-ZnSnO/Si bilayer tunnel FETs Kimihiko Kato (Univ. of Tokyo/AIST), Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2019-46 ICD2019-11 Link to ES Tech. Rep. Archives: SDM2019-46 ICD2019-11 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have examined impact of an amorphous ZnSnO channel layer with high thickness uniformity on electrical characteristics of a bilayer tunneling FET (TFET) with an oxide semiconductor channel (OS) and a group-IV semiconductor source. TCAD simulation revealed that the threshold voltage for band-to-band tunneling strongly varies with the OS channel thickness, indicating that the channel thickness non-uniformity could affect the sub-threshold characteristics of the bilayer TFET. In order to improve the channel thickness uniformity, we have developed the ZnSnO deposition condition to realize high thickness uniformity and have achieved the improvement of the sub-threshold characteristics with the amorphous ZnSnO channel layer. On the other hand, it has also been found that existence of tail-states related to the amorphous structure could be one of physical reasons to limit the sub-threshold characteristics of the bilayer TFETs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
bilayer / TFET / ZnSnO / amorphous / uniformity / sub-threshold characteristics / / |
Reference Info. |
IEICE Tech. Rep., vol. 119, no. 161, SDM2019-46, pp. 63-66, Aug. 2019. |
Paper # |
SDM2019-46 |
Date of Issue |
2019-07-31 (SDM, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2019-46 ICD2019-11 Link to ES Tech. Rep. Archives: SDM2019-46 ICD2019-11 |
Conference Information |
Committee |
SDM ICD ITE-IST |
Conference Date |
2019-08-07 - 2019-08-09 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
Paper Information |
Registration To |
SDM |
Conference Code |
2019-08-SDM-ICD-IST |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Fabrication and electrical characteristics of amorphous-ZnSnO/Si bilayer tunnel FETs |
Sub Title (in English) |
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Keyword(1) |
bilayer |
Keyword(2) |
TFET |
Keyword(3) |
ZnSnO |
Keyword(4) |
amorphous |
Keyword(5) |
uniformity |
Keyword(6) |
sub-threshold characteristics |
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Keyword(8) |
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1st Author's Name |
Kimihiko Kato |
1st Author's Affiliation |
The University of Tokyo/National Institute of Advanced Industrial Science and Technology (Univ. of Tokyo/AIST) |
2nd Author's Name |
Hiroaki Matsui |
2nd Author's Affiliation |
The University of Tokyo (Univ. of Tokyo) |
3rd Author's Name |
Hitoshi Tabata |
3rd Author's Affiliation |
The University of Tokyo (Univ. of Tokyo) |
4th Author's Name |
Mitsuru Takenaka |
4th Author's Affiliation |
The University of Tokyo (Univ. of Tokyo) |
5th Author's Name |
Shinichi Takagi |
5th Author's Affiliation |
The University of Tokyo (Univ. of Tokyo) |
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Speaker |
Author-1 |
Date Time |
2019-08-09 10:15:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2019-46, ICD2019-11 |
Volume (vol) |
vol.119 |
Number (no) |
no.161(SDM), no.162(ICD) |
Page |
pp.63-66 |
#Pages |
4 |
Date of Issue |
2019-07-31 (SDM, ICD) |
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