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Paper Abstract and Keywords
Presentation 2019-08-09 10:15
Fabrication and electrical characteristics of amorphous-ZnSnO/Si bilayer tunnel FETs
Kimihiko Kato (Univ. of Tokyo/AIST), Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2019-46 ICD2019-11
Abstract (in Japanese) (See Japanese page) 
(in English) We have examined impact of an amorphous ZnSnO channel layer with high thickness uniformity on electrical characteristics of a bilayer tunneling FET (TFET) with an oxide semiconductor channel (OS) and a group-IV semiconductor source. TCAD simulation revealed that the threshold voltage for band-to-band tunneling strongly varies with the OS channel thickness, indicating that the channel thickness non-uniformity could affect the sub-threshold characteristics of the bilayer TFET. In order to improve the channel thickness uniformity, we have developed the ZnSnO deposition condition to realize high thickness uniformity and have achieved the improvement of the sub-threshold characteristics with the amorphous ZnSnO channel layer. On the other hand, it has also been found that existence of tail-states related to the amorphous structure could be one of physical reasons to limit the sub-threshold characteristics of the bilayer TFETs.
Keyword (in Japanese) (See Japanese page) 
(in English) bilayer / TFET / ZnSnO / amorphous / uniformity / sub-threshold characteristics / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 161, SDM2019-46, pp. 63-66, Aug. 2019.
Paper # SDM2019-46 
Date of Issue 2019-07-31 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2019-46 ICD2019-11

Conference Information
Committee SDM ICD ITE-IST  
Conference Date 2019-08-07 - 2019-08-09 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ., Graduate School /Faculty of Information Science and 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications 
Paper Information
Registration To SDM 
Conference Code 2019-08-SDM-ICD-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication and electrical characteristics of amorphous-ZnSnO/Si bilayer tunnel FETs 
Sub Title (in English)  
Keyword(1) bilayer  
Keyword(2) TFET  
Keyword(3) ZnSnO  
Keyword(4) amorphous  
Keyword(5) uniformity  
Keyword(6) sub-threshold characteristics  
Keyword(7)  
Keyword(8)  
1st Author's Name Kimihiko Kato  
1st Author's Affiliation The University of Tokyo/National Institute of Advanced Industrial Science and Technology (Univ. of Tokyo/AIST)
2nd Author's Name Hiroaki Matsui  
2nd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
3rd Author's Name Hitoshi Tabata  
3rd Author's Affiliation The University of Tokyo (Univ. of Tokyo)
4th Author's Name Mitsuru Takenaka  
4th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
5th Author's Name Shinichi Takagi  
5th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
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Speaker Author-1 
Date Time 2019-08-09 10:15:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2019-46, ICD2019-11 
Volume (vol) vol.119 
Number (no) no.161(SDM), no.162(ICD) 
Page pp.63-66 
#Pages 4 
Date of Issue 2019-07-31 (SDM, ICD) 

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