Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2019-10-24 13:00
[Invited Talk] Random nanostructure formation and electric readout for nano-artifact metrics
Seiya Kasai, Renpeng Lu, Katsumi Shimizu, Xiang Yin (Hokkaido Univ.), Yosuke Ueba, Mikio Ishikawa, Mitsuru Kitamura (DNP), Morihisa Hoga (AIST), Makoto Naruse (Univ. of Tokyo), Tsutomu Matsumoto (YNU) SDM2019-62
Abstract (in Japanese) (See Japanese page) 
(in English) We introduce a basic concept of nano-artifact metrics, expected to be a highly secure authentication technique using nano-scale random structures. Recent development of the basic technologies for the nano-artifact metrics including formation of two-dimensional random nanostructure using a resist collapse and a novel electric readout of the formed nanostructures.
Keyword (in Japanese) (See Japanese page) 
(in English) Artifact metrics / Random nanostructure / Resist collapse / Electric readout / Si MOSFET / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 239, SDM2019-62, pp. 45-50, Oct. 2019.
Paper # SDM2019-62 
Date of Issue 2019-10-16 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2019-62

Conference Information
Committee SDM  
Conference Date 2019-10-23 - 2019-10-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2019-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Random nanostructure formation and electric readout for nano-artifact metrics 
Sub Title (in English)  
Keyword(1) Artifact metrics  
Keyword(2) Random nanostructure  
Keyword(3) Resist collapse  
Keyword(4) Electric readout  
Keyword(5) Si MOSFET  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Seiya Kasai  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Renpeng Lu  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Katsumi Shimizu  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Xiang Yin  
4th Author's Affiliation Hokkaido University (Hokkaido Univ.)
5th Author's Name Yosuke Ueba  
5th Author's Affiliation Dai Nippon Printing (DNP)
6th Author's Name Mikio Ishikawa  
6th Author's Affiliation Dai Nippon Printing (DNP)
7th Author's Name Mitsuru Kitamura  
7th Author's Affiliation Dai Nippon Printing (DNP)
8th Author's Name Morihisa Hoga  
8th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
9th Author's Name Makoto Naruse  
9th Author's Affiliation The University of Tokyo (Univ. of Tokyo)
10th Author's Name Tsutomu Matsumoto  
10th Author's Affiliation Yokohama National University (YNU)
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2019-10-24 13:00:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2019-62 
Volume (vol) vol.119 
Number (no) no.239 
Page pp.45-50 
#Pages 6 
Date of Issue 2019-10-16 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan