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| Presentation | 2019-11-08 09:30 [Invited Talk] Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST)  SDM2019-74 Link to ES Tech. Rep. Archives: SDM2019-74 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We propose a method to simulate the dynamic behavior of field-effect transistors (FETs) having ferroelectric materials in the gate stack and harnessing their ferroelectricity within the standard framework of device simulation. This method enables a device simulator to solve the Landau-Khalatnikov equation describing the behavior of the polarization in ferroelectric materials together with the other equations governing FETs such as Poisson's equation. We incorporate this method into our original homemade device simulator and realize the simulation of FETs harnessing the negative capacitance of ferroelectric materials. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | ferroelectrics / negative capacitance / field-effect transistors / device simulation / TCAD / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 273, SDM2019-74, pp. 27-32, Nov. 2019. | |
| Paper # | SDM2019-74 | |
| Date of Issue | 2019-10-31 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2019-74 Link to ES Tech. Rep. Archives: SDM2019-74 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2019-11-07 - 2019-11-08 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2019-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Device Simulation of Dynamic Behavior of Ferroelectric Field-Effect Transistors |
| Sub Title (in English) | |
| Keyword(1) | ferroelectrics |
| Keyword(2) | negative capacitance |
| Keyword(3) | field-effect transistors |
| Keyword(4) | device simulation |
| Keyword(5) | TCAD |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Junichi Hattori |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 2nd Author's Name | Tsutomu Ikegami |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 3rd Author's Name | Koichi Fukuda |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 4th Author's Name | Hiroyuki Ota |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 5th Author's Name | Shinji Migita |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 6th Author's Name | Hidehiro Asai |
| 6th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
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| Speaker | Author-1 |
| Date Time | 2019-11-08 09:30:00 |
| Presentation Time | 60 minutes |
| Registration for | SDM |
| Paper # | SDM2019-74 |
| Volume (vol) | vol.119 |
| Number (no) | no.273 |
| Page | pp.27-32 |
| #Pages | 6 |
| Date of Issue | 2019-10-31 (SDM) |
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