Paper Abstract and Keywords |
Presentation |
2019-11-14 15:35
High-Efficiency GaN HEMT Doherty Power Amplifier Based on Two-Power-Level Impedance Optimization including Harmonic Treatment Takuya Seshimo, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2019-106 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Further high efficiency and high functionality of power amplifier are required for the next generation wireless communication systems. With the advancement of communication systems, digitally modulated signals processed by transmitters such as base stations have higher peak-to-average power ratio (PAPR) than before. For this, power amplifiers require high-efficiency amplification over a wide dynamic power range. A Doherty power amplifier (DA) is one powerful solution for this issue. We have proposed DA without a quarter-wave transformer. We aimed at higher efficiency based on the design method of DA without a quarter-wave transformer. For this purpose, the harmonic treatments were added to the matching circuit of the main amplifier and auxiliary amplifier used in the DA, and it was designed, prototyped and evaluated. The fabricated DPA achieved a maximum drain efficiency of 67% and a maximum power-added efficiency (PAE) of 61% with a saturation output power of 40 dBm at 4.7 GHz. Furthermore, in a 7-dB back-off condition, a drain efficiency of 66% and a PAE of 60% were obtained, which were comparable to the saturated output power efficiencies and had excellent back-off performance. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Doherty power amplifier / Harmonic treatment / GaN HEMT / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 119, no. 292, MW2019-106, pp. 35-39, Nov. 2019. |
Paper # |
MW2019-106 |
Date of Issue |
2019-11-07 (MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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MW2019-106 |
Conference Information |
Committee |
MW |
Conference Date |
2019-11-14 - 2019-11-15 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Minami Daido Villa. Tamokuteki Koryu Center |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Microwave Technologies |
Paper Information |
Registration To |
MW |
Conference Code |
2019-11-MW |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
High-Efficiency GaN HEMT Doherty Power Amplifier Based on Two-Power-Level Impedance Optimization including Harmonic Treatment |
Sub Title (in English) |
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Doherty power amplifier |
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Harmonic treatment |
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GaN HEMT |
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1st Author's Name |
Takuya Seshimo |
1st Author's Affiliation |
The University of Electro-Communications (UEC) |
2nd Author's Name |
Yoichiro Takayama |
2nd Author's Affiliation |
The University of Electro-Communications (UEC) |
3rd Author's Name |
Ryo Ishikawa |
3rd Author's Affiliation |
The University of Electro-Communications (UEC) |
4th Author's Name |
Kazuhiko Honjo |
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The University of Electro-Communications (UEC) |
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Speaker |
Author-1 |
Date Time |
2019-11-14 15:35:00 |
Presentation Time |
25 minutes |
Registration for |
MW |
Paper # |
MW2019-106 |
Volume (vol) |
vol.119 |
Number (no) |
no.292 |
Page |
pp.35-39 |
#Pages |
5 |
Date of Issue |
2019-11-07 (MW) |