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Paper Abstract and Keywords
Presentation 2019-11-14 15:35
High-Efficiency GaN HEMT Doherty Power Amplifier Based on Two-Power-Level Impedance Optimization including Harmonic Treatment
Takuya Seshimo, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2019-106
Abstract (in Japanese) (See Japanese page) 
(in English) Further high efficiency and high functionality of power amplifier are required for the next generation wireless communication systems. With the advancement of communication systems, digitally modulated signals processed by transmitters such as base stations have higher peak-to-average power ratio (PAPR) than before. For this, power amplifiers require high-efficiency amplification over a wide dynamic power range. A Doherty power amplifier (DA) is one powerful solution for this issue. We have proposed DA without a quarter-wave transformer. We aimed at higher efficiency based on the design method of DA without a quarter-wave transformer. For this purpose, the harmonic treatments were added to the matching circuit of the main amplifier and auxiliary amplifier used in the DA, and it was designed, prototyped and evaluated. The fabricated DPA achieved a maximum drain efficiency of 67% and a maximum power-added efficiency (PAE) of 61% with a saturation output power of 40 dBm at 4.7 GHz. Furthermore, in a 7-dB back-off condition, a drain efficiency of 66% and a PAE of 60% were obtained, which were comparable to the saturated output power efficiencies and had excellent back-off performance.
Keyword (in Japanese) (See Japanese page) 
(in English) Doherty power amplifier / Harmonic treatment / GaN HEMT / / / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 292, MW2019-106, pp. 35-39, Nov. 2019.
Paper # MW2019-106 
Date of Issue 2019-11-07 (MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee MW  
Conference Date 2019-11-14 - 2019-11-15 
Place (in Japanese) (See Japanese page) 
Place (in English) Minami Daido Villa. Tamokuteki Koryu Center 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Microwave Technologies 
Paper Information
Registration To MW 
Conference Code 2019-11-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High-Efficiency GaN HEMT Doherty Power Amplifier Based on Two-Power-Level Impedance Optimization including Harmonic Treatment 
Sub Title (in English)  
Keyword(1) Doherty power amplifier  
Keyword(2) Harmonic treatment  
Keyword(3) GaN HEMT  
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1st Author's Name Takuya Seshimo  
1st Author's Affiliation The University of Electro-Communications (UEC)
2nd Author's Name Yoichiro Takayama  
2nd Author's Affiliation The University of Electro-Communications (UEC)
3rd Author's Name Ryo Ishikawa  
3rd Author's Affiliation The University of Electro-Communications (UEC)
4th Author's Name Kazuhiko Honjo  
4th Author's Affiliation The University of Electro-Communications (UEC)
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Speaker Author-1 
Date Time 2019-11-14 15:35:00 
Presentation Time 25 minutes 
Registration for MW 
Paper # MW2019-106 
Volume (vol) vol.119 
Number (no) no.292 
Page pp.35-39 
#Pages
Date of Issue 2019-11-07 (MW) 


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