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Paper Abstract and Keywords
Presentation 2019-11-21 15:50
Polarization characteristics in GaN-based vertical cavity surface emitting laser with AlInN/GaN distribution bragg reflectors
Kaoru Oda, Ryosuke Iida, Sho Iwayama, Kazuki Kiyohara, Tetsuya Takeuci, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2019-46 CPM2019-65 LQE2019-89
Abstract (in Japanese) (See Japanese page) 
(in English) In this study, we investigated polarization characteristics of GaN-based VCSELs. In particular, dependences of substrate off-direction and electrode arrangement direction on the polarization direction were investigated. We fabricated two types of VCSELs grown on GaN substrates with 0.4o off-angle towards m-axis direction. One was a perpendicular case and the other was a parallel case in a relation between the substrate off-direction and the electrode arrangement direction. We measured polarization directions of more than 20 VCSELs in each case. As a result, 45% VCSELs in the perpendicular case and 67% VCSELs in the parallel case showed that the polarization direction corresponded to the substrate off-direction. In other words, total more than 60% VCSEL showed such a polarization direction, suggesting that the substrate off-direction even with the slight off-angle determined the polarization direction to some extent.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / VCSEL / polarization / off-direction / / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 304, LQE2019-89, pp. 57-60, Nov. 2019.
Paper # LQE2019-89 
Date of Issue 2019-11-14 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2019-46 CPM2019-65 LQE2019-89

Conference Information
Committee CPM LQE ED  
Conference Date 2019-11-21 - 2019-11-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka Univ. (Hamamatsu) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2019-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Polarization characteristics in GaN-based vertical cavity surface emitting laser with AlInN/GaN distribution bragg reflectors 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) VCSEL  
Keyword(3) polarization  
Keyword(4) off-direction  
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1st Author's Name Kaoru Oda  
1st Author's Affiliation Meijo University (Meijo Univ.)
2nd Author's Name Ryosuke Iida  
2nd Author's Affiliation Meijo University (Meijo Univ.)
3rd Author's Name Sho Iwayama  
3rd Author's Affiliation Meijo University (Meijo Univ.)
4th Author's Name Kazuki Kiyohara  
4th Author's Affiliation Meijo University (Meijo Univ.)
5th Author's Name Tetsuya Takeuci  
5th Author's Affiliation Meijo University (Meijo Univ.)
6th Author's Name Satoshi Kamiyama  
6th Author's Affiliation Meijo University (Meijo Univ.)
7th Author's Name Motoaki Iwaya  
7th Author's Affiliation Meijo University (Meijo Univ.)
8th Author's Name Isamu Akasaki  
8th Author's Affiliation Meijo University/Nagoya University (Meijo Univ./Nagoya Univ.)
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Speaker Author-1 
Date Time 2019-11-21 15:50:00 
Presentation Time 20 minutes 
Registration for LQE 
Paper # ED2019-46, CPM2019-65, LQE2019-89 
Volume (vol) vol.119 
Number (no) no.302(ED), no.303(CPM), no.304(LQE) 
Page pp.57-60 
#Pages 4 
Date of Issue 2019-11-14 (ED, CPM, LQE) 

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