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Paper Abstract and Keywords
Presentation 2019-11-21 15:30
Growth, crystal and optical characterization of quaternary AlGaInN epitaxial films lattice-matched to c-plane GaN
Hiroki Harada, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.) ED2019-45 CPM2019-64 LQE2019-88
Abstract (in Japanese) (See Japanese page) 
(in English) Quaternary AlGaInN films with thickness greater than 150 nm are grown on c-plane GaN-on-sapphire templates by metalorganic chemical vapor deposition (MOCVD). The AlxGayInzN films near alloy composition lattice‐matching to GaN on sapphire (0.532 ≤ x ≤ 0.716, 0.146 ≤ y ≤ 0.366, and 0.092 ≤ z ≤ 0.182) are confirmed to be epitaxially grown, and they show relatively flat surfaces regardless of their lattice strain and their direction. The crystal mosaicity in the AlGaInN films is observed to take over that of the underlying GaN films. The refractive index of AlGaInN films ranges from ≈2.4 to 2.3 in the whole visible wavelengths, largely independent of their alloy compositions. Spectroscopic ellipsometry and photoluminescence analyses indicate that the MOCVD-grown AlGaInN films have a certain degree of compositional fluctuation affecting their optical band edges.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaInN / AlGaInN/GaN structure / MOCVD / / / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 304, LQE2019-88, pp. 53-56, Nov. 2019.
Paper # LQE2019-88 
Date of Issue 2019-11-14 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2019-45 CPM2019-64 LQE2019-88

Conference Information
Committee CPM LQE ED  
Conference Date 2019-11-21 - 2019-11-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka Univ. (Hamamatsu) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2019-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth, crystal and optical characterization of quaternary AlGaInN epitaxial films lattice-matched to c-plane GaN 
Sub Title (in English)  
Keyword(1) AlGaInN  
Keyword(2) AlGaInN/GaN structure  
Keyword(3) MOCVD  
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1st Author's Name Hiroki Harada  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. Tech.)
2nd Author's Name Makoto Miyoshi  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. Tech.)
3rd Author's Name Takashi Egawa  
3rd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. Tech.)
4th Author's Name Tetsuya Takeuchi  
4th Author's Affiliation Meijo University (Meijo Univ.)
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Speaker Author-1 
Date Time 2019-11-21 15:30:00 
Presentation Time 20 minutes 
Registration for LQE 
Paper # ED2019-45, CPM2019-64, LQE2019-88 
Volume (vol) vol.119 
Number (no) no.302(ED), no.303(CPM), no.304(LQE) 
Page pp.53-56 
#Pages 4 
Date of Issue 2019-11-14 (ED, CPM, LQE) 

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