Paper Abstract and Keywords |
Presentation |
2020-01-28 13:00
[Invited Talk]
Formation of High Reliability Hydrogen-free MONOS Cells Using Deuterated Ammonia Masaki Noguchi, Tatsunori Isogai, Hiroyuki Yamashita, Keiichi Sawa, Ryota Fujitsuka, Takanori Yamanaka, Shunsuke Okada, Tomonori Aoyama, Fumiki Aiso, Junko Abe, Yoshiro Ogawa, Seiji Nakagawa, Hideshi Miyajima (KIOXIA) SDM2019-82 Link to ES Tech. Rep. Archives: SDM2019-82 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
For high reliability non-volatile memory cell dielectrics, hydrogen-free deuterated tunnel SiON and charge-trap SiN films are demonstrated. By using deuterated ammonia (ND3) instead of ammonia (NH3) as nitridation species in ALD cycles, an ultra-high deuterium/hydrogen ratio has been successfully obtained in both films, and these films showed good endurance for program / erase stress and data retention properties in MONOS capacitors. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Reliability / ND3 / Deuterium / Hydrogen / ALD / Data Retention / DR / |
Reference Info. |
IEICE Tech. Rep., vol. 119, no. 397, SDM2019-82, pp. 1-4, Jan. 2020. |
Paper # |
SDM2019-82 |
Date of Issue |
2020-01-21 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
SDM2019-82 Link to ES Tech. Rep. Archives: SDM2019-82 |
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