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Paper Abstract and Keywords
Presentation 2020-05-28 13:30
[Invited Talk] Fabrication Process of InP-HEMT-based Sub-millimeter Wave ICs for Beyond 5G Application
Takuya Tsutsumi, Hiroki Sugiyama, Hiroshi Hamada, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) MWP2020-1
Abstract (in Japanese) (See Japanese page) 
(in English) The 300-GHz sub-millimeter-wave band is one of the candidate frequency for “Beyond 5G” networks to meet rapidly increasing traffic demands. InP-based Sub-millimeter-wave monolithic ICs (SMMICs) have attracted much attention for applying Beyond 5G because InP-based high electron mobility transistors (InP-HEMTs) feature superior RF characteristics. This paper briefly reviews fundamental physical demands and reports InP-HEMTs and wafer-level backside process technology. We also show a world-record-class 120-Gb/s wireless transmission with the distance of 9.8 m by using InP-HEMT-SMMIC modules with 300-GHz band.
Keyword (in Japanese) (See Japanese page) 
(in English) Beyond 5G / Sub-millimeter-wave monolithic ICs / Indium phosphide / High electron mobility transistors / Wafer-level backside process / backside lines / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 44, MWP2020-1, pp. 1-6, May 2020.
Paper # MWP2020-1 
Date of Issue 2020-05-21 (MWP) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee MWP  
Conference Date 2020-05-28 - 2020-05-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To MWP 
Conference Code 2020-05-MWP 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication Process of InP-HEMT-based Sub-millimeter Wave ICs for Beyond 5G Application 
Sub Title (in English)  
Keyword(1) Beyond 5G  
Keyword(2) Sub-millimeter-wave monolithic ICs  
Keyword(3) Indium phosphide  
Keyword(4) High electron mobility transistors  
Keyword(5) Wafer-level backside process  
Keyword(6) backside lines  
Keyword(7)  
Keyword(8)  
1st Author's Name Takuya Tsutsumi  
1st Author's Affiliation NTT Corporation (NTT)
2nd Author's Name Hiroki Sugiyama  
2nd Author's Affiliation NTT Corporation (NTT)
3rd Author's Name Hiroshi Hamada  
3rd Author's Affiliation NTT Corporation (NTT)
4th Author's Name Hideyuki Nosaka  
4th Author's Affiliation NTT Corporation (NTT)
5th Author's Name Hideaki Matsuzaki  
5th Author's Affiliation NTT Corporation (NTT)
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Speaker Author-1 
Date Time 2020-05-28 13:30:00 
Presentation Time 60 minutes 
Registration for MWP 
Paper # MWP2020-1 
Volume (vol) vol.120 
Number (no) no.44 
Page pp.1-6 
#Pages 6 
Date of Issue 2020-05-21 (MWP) 

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