Paper Abstract and Keywords |
Presentation |
2020-11-05 13:00
Effect of negative ion bombardment increased in low-pressure sputtering deposition on crystallinity and piezoelectric property of ScAlN thin film Takumi Tominaga, Shinji Takayanagi (Doshisha Univ.), Takahiko Yanagitani (Waseda Univ.) US2020-43 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Since the ScAlN film has much higher piezoelectric response than the AlN film, it is expected to be applied to BAW devices. Sputtering method is widely used for ScAlN films deposition. We have previously shown that impurities in the Sc ingots lead negative ion bombardment to the substrate, which deteriorates quality of ScAlN films. Generally, sputtering deposition at low pressure improves the film quality because scattering and thermalization of sputtered particles are reduced. However, it is known that negative ion bombardment increasing at low pressure deteriorate the c-axis orientated in sputtering deposition of ZnO. In this study, we have demonstrated that crystallinity and piezoelectric property of ScAlN film are deteriorated by the negative ion bombardment increased in low-pressure sputtering deposition. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ScAlN / Piezoelectric thin film / Negative ion bombardment / Sputtering deposition / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 120, no. 222, US2020-43, pp. 1-6, Nov. 2020. |
Paper # |
US2020-43 |
Date of Issue |
2020-10-29 (US) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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US2020-43 |
Conference Information |
Committee |
US |
Conference Date |
2020-11-05 - 2020-11-05 |
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Paper Information |
Registration To |
US |
Conference Code |
2020-11-US |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Effect of negative ion bombardment increased in low-pressure sputtering deposition on crystallinity and piezoelectric property of ScAlN thin film |
Sub Title (in English) |
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Keyword(1) |
ScAlN |
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Piezoelectric thin film |
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Negative ion bombardment |
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Sputtering deposition |
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1st Author's Name |
Takumi Tominaga |
1st Author's Affiliation |
Doshisha University (Doshisha Univ.) |
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Shinji Takayanagi |
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Doshisha University (Doshisha Univ.) |
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Takahiko Yanagitani |
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Waseda University (Waseda Univ.) |
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Speaker |
Author-1 |
Date Time |
2020-11-05 13:00:00 |
Presentation Time |
25 minutes |
Registration for |
US |
Paper # |
US2020-43 |
Volume (vol) |
vol.120 |
Number (no) |
no.222 |
Page |
pp.1-6 |
#Pages |
6 |
Date of Issue |
2020-10-29 (US) |
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