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Paper Abstract and Keywords
Presentation 2020-11-05 13:00
Effect of negative ion bombardment increased in low-pressure sputtering deposition on crystallinity and piezoelectric property of ScAlN thin film
Takumi Tominaga, Shinji Takayanagi (Doshisha Univ.), Takahiko Yanagitani (Waseda Univ.) US2020-43
Abstract (in Japanese) (See Japanese page) 
(in English) Since the ScAlN film has much higher piezoelectric response than the AlN film, it is expected to be applied to BAW devices. Sputtering method is widely used for ScAlN films deposition. We have previously shown that impurities in the Sc ingots lead negative ion bombardment to the substrate, which deteriorates quality of ScAlN films. Generally, sputtering deposition at low pressure improves the film quality because scattering and thermalization of sputtered particles are reduced. However, it is known that negative ion bombardment increasing at low pressure deteriorate the c-axis orientated in sputtering deposition of ZnO. In this study, we have demonstrated that crystallinity and piezoelectric property of ScAlN film are deteriorated by the negative ion bombardment increased in low-pressure sputtering deposition.
Keyword (in Japanese) (See Japanese page) 
(in English) ScAlN / Piezoelectric thin film / Negative ion bombardment / Sputtering deposition / / / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 222, US2020-43, pp. 1-6, Nov. 2020.
Paper # US2020-43 
Date of Issue 2020-10-29 (US) 
ISSN Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee US  
Conference Date 2020-11-05 - 2020-11-05 
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Paper Information
Registration To US 
Conference Code 2020-11-US 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of negative ion bombardment increased in low-pressure sputtering deposition on crystallinity and piezoelectric property of ScAlN thin film 
Sub Title (in English)  
Keyword(1) ScAlN  
Keyword(2) Piezoelectric thin film  
Keyword(3) Negative ion bombardment  
Keyword(4) Sputtering deposition  
1st Author's Name Takumi Tominaga  
1st Author's Affiliation Doshisha University (Doshisha Univ.)
2nd Author's Name Shinji Takayanagi  
2nd Author's Affiliation Doshisha University (Doshisha Univ.)
3rd Author's Name Takahiko Yanagitani  
3rd Author's Affiliation Waseda University (Waseda Univ.)
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Speaker Author-1 
Date Time 2020-11-05 13:00:00 
Presentation Time 25 minutes 
Registration for US 
Paper # US2020-43 
Volume (vol) vol.120 
Number (no) no.222 
Page pp.1-6 
Date of Issue 2020-10-29 (US) 

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