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Paper Abstract and Keywords
Presentation 2020-11-26 14:40
Two-Dimensional Characterization of n-GaN Schottky Contacts Printed by Using Ni Nanoink
Yuto Kawasumi, Yuto Yasui (Univ. of Fukui), Yukiyasu Kashiwagi, Toshiyuki Tamai (ORIST), Kenji Shiojima (Univ. of Fukui) ED2020-10 CPM2020-31 LQE2020-61
Abstract (in Japanese) (See Japanese page) 
(in English) Two-dimensional characterization of n-GaN Schottky contacts formed by printing method using Ni nanoink was performed by scanning internal photoemission microscopy (SIPM). The sample annealed at 400 ℃ showed a large series resistance and nonuniformity over the electrode. The sample annealed at 500 ℃ obtained better I-V characteristics with a large q$phi$B value of 1.21 eV, a small n-value of 1.13 and better uniformity. However, when annealing temperature increased to 600 ℃, the I-V characteristics became leaky due to the interfacial reaction between Ni and GaN. The q$phi$B value obtained in this study was comparable with that a conventional evaporated Ni contact, and SIPM indicated that the printing method using nanoink is a candidate to form Schottky contacts on n-GaN.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / Schottky contact / printed electronics / scanning internal photoemission microscopy / / / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 254, ED2020-10, pp. 37-40, Nov. 2020.
Paper # ED2020-10 
Date of Issue 2020-11-19 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2020-10 CPM2020-31 LQE2020-61

Conference Information
Committee LQE CPM ED  
Conference Date 2020-11-26 - 2020-11-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2020-11-LQE-CPM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Two-Dimensional Characterization of n-GaN Schottky Contacts Printed by Using Ni Nanoink 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) Schottky contact  
Keyword(3) printed electronics  
Keyword(4) scanning internal photoemission microscopy  
Keyword(5)  
Keyword(6)  
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Keyword(8)  
1st Author's Name Yuto Kawasumi  
1st Author's Affiliation University of Fukui (Univ. of Fukui)
2nd Author's Name Yuto Yasui  
2nd Author's Affiliation University of Fukui (Univ. of Fukui)
3rd Author's Name Yukiyasu Kashiwagi  
3rd Author's Affiliation Osaka Research Institute of Industrial Science and Technology (ORIST)
4th Author's Name Toshiyuki Tamai  
4th Author's Affiliation Osaka Research Institute of Industrial Science and Technology (ORIST)
5th Author's Name Kenji Shiojima  
5th Author's Affiliation University of Fukui (Univ. of Fukui)
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Speaker Author-1 
Date Time 2020-11-26 14:40:00 
Presentation Time 20 minutes 
Registration for ED 
Paper # ED2020-10, CPM2020-31, LQE2020-61 
Volume (vol) vol.120 
Number (no) no.254(ED), no.255(CPM), no.256(LQE) 
Page pp.37-40 
#Pages 4 
Date of Issue 2020-11-19 (ED, CPM, LQE) 

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