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Paper Abstract and Keywords
Presentation 2020-11-26 15:30
Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment
Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63
Abstract (in Japanese) (See Japanese page) 
(in English) With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading post-silicon semiconductor material well-suited for power devices. However, at present, AlGaN/GaN high-electron-mobility transistors (HEMTs) usually exhibit effective critical field values much lower than the theoretical limit. In this work, we report on the improved breakdown voltage characteristics in oxygen plasma-treated AlGaN/GaN HEMTs. Treatment was performed after the gate metal deposition, effectively exposing only the AlGaN surface in the access regions to oxygen plasma. It is believed that the increased breakdown voltage after oxygen plasma treatment is due to reduced surface charging, leading to a relatively flat distribution of electric field along the gate-drain access region.
Keyword (in Japanese) (See Japanese page) 
(in English) gallium nitride / high-electron-mobility transistor / O2 plasma treatment / breakdown voltage / / / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 254, ED2020-12, pp. 45-48, Nov. 2020.
Paper # ED2020-12 
Date of Issue 2020-11-19 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2020-12 CPM2020-33 LQE2020-63

Conference Information
Committee LQE CPM ED  
Conference Date 2020-11-26 - 2020-11-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2020-11-LQE-CPM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment 
Sub Title (in English)  
Keyword(1) gallium nitride  
Keyword(2) high-electron-mobility transistor  
Keyword(3) O2 plasma treatment  
Keyword(4) breakdown voltage  
Keyword(5)  
Keyword(6)  
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1st Author's Name Shunsuke Kamiya  
1st Author's Affiliation University of Fukui (Univ. of Fukui)
2nd Author's Name Takashi Nishitani  
2nd Author's Affiliation University of Fukui (Univ. of Fukui)
3rd Author's Name Yu Matsuda  
3rd Author's Affiliation University of Fukui (Univ. of Fukui)
4th Author's Name Nozomu Takano  
4th Author's Affiliation University of Fukui (Univ. of Fukui)
5th Author's Name Joel T. Asubar  
5th Author's Affiliation University of Fukui (Univ. of Fukui)
6th Author's Name Hirokuni Tokuda  
6th Author's Affiliation University of Fukui (Univ. of Fukui)
7th Author's Name Masaaki Kuzuhara  
7th Author's Affiliation Kwansei Gakuin University (Kwansei Gakuin Univ.)
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Speaker Author-1 
Date Time 2020-11-26 15:30:00 
Presentation Time 20 minutes 
Registration for ED 
Paper # ED2020-12, CPM2020-33, LQE2020-63 
Volume (vol) vol.120 
Number (no) no.254(ED), no.255(CPM), no.256(LQE) 
Page pp.45-48 
#Pages 4 
Date of Issue 2020-11-19 (ED, CPM, LQE) 

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