Paper Abstract and Keywords |
Presentation |
2020-11-26 15:50
GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3 Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.), Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura (Kumamoto Univ.) ED2020-13 CPM2020-34 LQE2020-64 Link to ES Tech. Rep. Archives: ED2020-13 CPM2020-34 LQE2020-64 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have fabricated AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Al2O3 gate dielectric deposited by mist chemical vapor deposition (mist-CVD) technique. The mist-Al2O3 MISHEMTs exhibited highly improved performance compared with the Schottky-gate devices. We obtained practically hysteresis-free transfer curves and capacitance-voltage profiles from the fabricated mist-Al2O3 MIS-HEMTs suggesting high interfacial quality of the mist-Al2O3/AlGaN structure. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Mist-CVD / AlGaN/GaN HEMT / Al2O3 insulator / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 120, no. 254, ED2020-13, pp. 49-52, Nov. 2020. |
Paper # |
ED2020-13 |
Date of Issue |
2020-11-19 (ED, CPM, LQE) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2020-13 CPM2020-34 LQE2020-64 Link to ES Tech. Rep. Archives: ED2020-13 CPM2020-34 LQE2020-64 |
|