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Paper Abstract and Keywords
Presentation 2020-11-26 15:50
GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3
Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.), Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura (Kumamoto Univ.) ED2020-13 CPM2020-34 LQE2020-64
Abstract (in Japanese) (See Japanese page) 
(in English) We have fabricated AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Al2O3 gate dielectric deposited by mist chemical vapor deposition (mist-CVD) technique. The mist-Al2O3 MISHEMTs exhibited highly improved performance compared with the Schottky-gate devices. We obtained practically hysteresis-free transfer curves and capacitance-voltage profiles from the fabricated mist-Al2O3 MIS-HEMTs suggesting high interfacial quality of the mist-Al2O3/AlGaN structure.
Keyword (in Japanese) (See Japanese page) 
(in English) Mist-CVD / AlGaN/GaN HEMT / Al2O3 insulator / / / / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 254, ED2020-13, pp. 49-52, Nov. 2020.
Paper # ED2020-13 
Date of Issue 2020-11-19 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2020-13 CPM2020-34 LQE2020-64

Conference Information
Committee LQE CPM ED  
Conference Date 2020-11-26 - 2020-11-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2020-11-LQE-CPM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3 
Sub Title (in English)  
Keyword(1) Mist-CVD  
Keyword(2) AlGaN/GaN HEMT  
Keyword(3) Al2O3 insulator  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
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1st Author's Name Low Rui Shan  
1st Author's Affiliation University of Fukui (Univ. of Fukui)
2nd Author's Name Itsuki Nagase  
2nd Author's Affiliation University of Fukui (Univ. of Fukui)
3rd Author's Name Ali Baratov  
3rd Author's Affiliation University of Fukui (Univ. of Fukui)
4th Author's Name Joel Tacla Asubar  
4th Author's Affiliation University of Fukui (Univ. of Fukui)
5th Author's Name Hirokuni Tokuda  
5th Author's Affiliation University of Fukui (Univ. of Fukui)
6th Author's Name Masaaki Kuzuhara  
6th Author's Affiliation Kwansei Gakuin University (Kwansei Gakuin Univ.)
7th Author's Name Zenji Yatabe  
7th Author's Affiliation Kumamoto University (Kumamoto Univ.)
8th Author's Name Kenta Naito  
8th Author's Affiliation Kumamoto University (Kumamoto Univ.)
9th Author's Name Motoyama Tomohiro  
9th Author's Affiliation Kumamoto University (Kumamoto Univ.)
10th Author's Name Yusui Nakamura  
10th Author's Affiliation Kumamoto University (Kumamoto Univ.)
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Speaker Author-1 
Date Time 2020-11-26 15:50:00 
Presentation Time 20 minutes 
Registration for ED 
Paper # ED2020-13, CPM2020-34, LQE2020-64 
Volume (vol) vol.120 
Number (no) no.254(ED), no.255(CPM), no.256(LQE) 
Page pp.49-52 
#Pages 4 
Date of Issue 2020-11-19 (ED, CPM, LQE) 

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