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Paper Abstract and Keywords
Presentation 2020-11-27 14:30
Crystalline Quality Improvement of Sputtered h-BN on Sapphire by High-Temperature Annealing
Ryoji Kataoka, Haruhiko Koizumi, Sho Iwayama, Hideto Miyake (Mie Univ.) ED2020-22 CPM2020-43 LQE2020-73
Abstract (in Japanese) (See Japanese page) 
(in English) Hexagonal boron nitride(h-BN) is a two-dimensional layered materials and is expected to functions as a strain relaxation layer and a release layer. Conventionally, h-BN has been produced by using a crystal growth method such as metalorganic vapor phase epitaxy (MOVPE) or molecular beam epitaxy (MBE). We have achieved high crystal quality of sputtered AlN on sapphire substrates by high-temperature face-to-face annealing (FFA). In this work, we aimed to the crystal quality improvement of sputtered h-BN on sapphire substrates by FFA. After 1700 oC, 3.0 hours of FFA, crystal quality of h-BN was improved and full-width at half maximum of Raman scattering was 17 cm-1.
Keyword (in Japanese) (See Japanese page) 
(in English) Hexagonal boron nitride / 2D materials / Sputter / face-to-face High-Temperature Annealing / Ultraviolet LED / / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 256, LQE2020-73, pp. 83-86, Nov. 2020.
Paper # LQE2020-73 
Date of Issue 2020-11-19 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee LQE CPM ED  
Conference Date 2020-11-26 - 2020-11-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2020-11-LQE-CPM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Crystalline Quality Improvement of Sputtered h-BN on Sapphire by High-Temperature Annealing 
Sub Title (in English)  
Keyword(1) Hexagonal boron nitride  
Keyword(2) 2D materials  
Keyword(3) Sputter  
Keyword(4) face-to-face High-Temperature Annealing  
Keyword(5) Ultraviolet LED  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Ryoji Kataoka  
1st Author's Affiliation Mie University (Mie Univ.)
2nd Author's Name Haruhiko Koizumi  
2nd Author's Affiliation Mie University (Mie Univ.)
3rd Author's Name Sho Iwayama  
3rd Author's Affiliation Mie University (Mie Univ.)
4th Author's Name Hideto Miyake  
4th Author's Affiliation Mie University (Mie Univ.)
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Speaker Author-1 
Date Time 2020-11-27 14:30:00 
Presentation Time 20 minutes 
Registration for LQE 
Paper # ED2020-22, CPM2020-43, LQE2020-73 
Volume (vol) vol.120 
Number (no) no.254(ED), no.255(CPM), no.256(LQE) 
Page pp.83-86 
#Pages 4 
Date of Issue 2020-11-19 (ED, CPM, LQE) 

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