Paper Abstract and Keywords |
Presentation |
2020-11-27 13:40
Optimization of the optical waveguide layer in AlGaN-based UV-B LD Shunya Tanaka (Meijo Univ.), Kosuke Sato (Asahi-Kasei), Shinji Yasue, Yuya Ogino, Kazuki Yamada, Sayaka Ishizuka, Tomoya Omori, Shohei Teramura, Sho Iwayama (Meijo Univ.), Hideto Miyake (Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2020-20 CPM2020-41 LQE2020-71 Link to ES Tech. Rep. Archives: ED2020-20 CPM2020-41 LQE2020-71 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Recently, the group reported the realization of current injection semiconductor lasers in the UV-B region. In the future, reducing the threshold current density will be the most important issue. In this study, we fabricated a GRIN-SCH structure current injection laser that can obtain a high light confinement coefficient Γ and can be expected to have a low threshold current density, and confirmed the operation of a room temperature pulsed laser with oscillation. Wavelength of 302 nm. Furthermore, it was confirmed that the threshold current density was reduced to 24 kA/cm2 by double-side facet coating at a cavity length of 700 µm. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
MOVPE / AlGaN / UV-B laser diode / GRIN-SCH / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 120, no. 256, LQE2020-71, pp. 75-78, Nov. 2020. |
Paper # |
LQE2020-71 |
Date of Issue |
2020-11-19 (ED, CPM, LQE) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2020-20 CPM2020-41 LQE2020-71 Link to ES Tech. Rep. Archives: ED2020-20 CPM2020-41 LQE2020-71 |
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