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Paper Abstract and Keywords
Presentation 2020-12-02 10:30
Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element
Yuhei Yamamoto, Tatuya Aramaki, Ryo Ito, Mutumi Kimura (Ryukoku Univ.) EID2020-3 SDM2020-37
Abstract (in Japanese) (See Japanese page) 
(in English) Most of the exhaust heat generated from factories, automobiles, PCs, etc. is unused. Thermoelectric conversion device can convert the heat energy into electrical energy. And it’s attracting attention as a clean power generation method. Among them, thermoelectric materials with transparency and flexibility can be applied to power generation using window glass and IoT sensors. Therefore, we are researching thin film thermoelectric conversion devices using GTO thin films which are transparent, flexible and rare metal-free oxide semiconductors. In this study, we evaluated the dependence of the oxygen flow ratio during sputtering and temperature post-annealing after film formation of the GTO thermoelectric conversion device. The sample was annealed at a low temperature of 100 °C to 400 °C. The conductivity improved until the temperature after annealing reached 200°C. After that, when the annealing temperature exceeded 300°C, the conductivity decreased.
Keyword (in Japanese) (See Japanese page) 
(in English) Thermoelectric conversion device / Seebeck effect / Oxide semiconductor / Transparent oxide semiconductor / / / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 272, EID2020-3, pp. 9-12, Dec. 2020.
Paper # EID2020-3 
Date of Issue 2020-11-25 (EID, SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2020-3 SDM2020-37

Conference Information
Committee EID SDM ITE-IDY  
Conference Date 2020-12-02 - 2020-12-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To EID 
Conference Code 2020-12-EID-SDM-IDY 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element 
Sub Title (in English)  
Keyword(1) Thermoelectric conversion device  
Keyword(2) Seebeck effect  
Keyword(3) Oxide semiconductor  
Keyword(4) Transparent oxide semiconductor  
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Keyword(6)  
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1st Author's Name Yuhei Yamamoto  
1st Author's Affiliation Ryukoku University (Ryukoku Univ.)
2nd Author's Name Tatuya Aramaki  
2nd Author's Affiliation Ryukoku University (Ryukoku Univ.)
3rd Author's Name Ryo Ito  
3rd Author's Affiliation Ryukoku University (Ryukoku Univ.)
4th Author's Name Mutumi Kimura  
4th Author's Affiliation Ryukoku University (Ryukoku Univ.)
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Speaker Author-1 
Date Time 2020-12-02 10:30:00 
Presentation Time 15 minutes 
Registration for EID 
Paper # EID2020-3, SDM2020-37 
Volume (vol) vol.120 
Number (no) no.272(EID), no.273(SDM) 
Page pp.9-12 
#Pages 4 
Date of Issue 2020-11-25 (EID, SDM) 

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