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Paper Abstract and Keywords
Presentation 2020-12-02 15:35
Phase Change Random Access memory using Cu2GeTe3
Shihori Akane (Ryukoku Univ), Isao Horiuchi (KOA Corp), Mutsumi Kimura (Ryukoku Univ) EID2020-13 SDM2020-47
Abstract (in Japanese) (See Japanese page) 
(in English) We are conducting research on Phase Change Random Access Memory (PCRAM) using “Cu2GeTe3: Copper-Germanium-Tellurium (CGT)”. The fast crystallization speed and good reversibility between the amorphous and crystalline states make “Ge2Sb2Te5:Germanium-Antimony-Tellurium(GST)” the most popular phase change material. CGT is expected to save energy because its amorphization temperature is lower and cllistallization temperature is higher than that of GST, was used as the phase change material of PCRAM. In this study, we fabricated PCRAM with different CGT film thickness and measured I-V characteristics. All devices showed resistive switching behavior caused by phase change of CGT.
Keyword (in Japanese) (See Japanese page) 
(in English) PCRAM / phase change material / Cu2GeTe3 / amorphous / crystal / / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 272, EID2020-13, pp. 50-53, Dec. 2020.
Paper # EID2020-13 
Date of Issue 2020-11-25 (EID, SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2020-13 SDM2020-47

Conference Information
Committee EID SDM ITE-IDY  
Conference Date 2020-12-02 - 2020-12-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To EID 
Conference Code 2020-12-EID-SDM-IDY 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Phase Change Random Access memory using Cu2GeTe3 
Sub Title (in English)  
Keyword(1) PCRAM  
Keyword(2) phase change material  
Keyword(3) Cu2GeTe3  
Keyword(4) amorphous  
Keyword(5) crystal  
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Keyword(7)  
Keyword(8)  
1st Author's Name Shihori Akane  
1st Author's Affiliation Ryukoku University (Ryukoku Univ)
2nd Author's Name Isao Horiuchi  
2nd Author's Affiliation KOA corporation (KOA Corp)
3rd Author's Name Mutsumi Kimura  
3rd Author's Affiliation Ryukoku University (Ryukoku Univ)
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Speaker Author-1 
Date Time 2020-12-02 15:35:00 
Presentation Time 15 minutes 
Registration for EID 
Paper # EID2020-13, SDM2020-47 
Volume (vol) vol.120 
Number (no) no.272(EID), no.273(SDM) 
Page pp.50-53 
#Pages 4 
Date of Issue 2020-11-25 (EID, SDM) 

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