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Paper Abstract and Keywords
Presentation 2020-12-10 13:15
A 3.9-GHz-Band GaN HEMT Outphasing Power Amplifier with Reactance-Compensation Compact Combiner
Ryoichi Ogasawara, Yoichiro Takayama, Ryo Ishikawa, Kazuhiko Honjo (UEC) MW2020-71
Abstract (in Japanese) (See Japanese page) 
(in English) Recently, the need for large-capacity communications has increased in wireless communication systems due to the increase in communication traffic. Since wideband digitally modulated signals with a large peak-to-average power ratio (PAPR) are used in large-capacity wireless communication, power amplifiers with high- efficiency over a wide dynamic range are required. In this report, we have proposed, fabricated, and evaluated an outphasing amplifier with a small combiner circuit. The small combiner circuit is designed based on series load compensation and consists of only one inductor and one capacitor without quarter-wavelength transmission lines. In the matching circuit design, dual-power-level optimization was performed near the back-off and saturation in order to expand the dynamic range. The fabricated GaN HEMT outphasing power amplifier showed a saturated output power of 37 dBm and a maximum drain efficiency of 77 % at 3.92 GHz. Furthermore, a drain efficiency of over 50 % was obtained within a 7 dB output back-off.
Keyword (in Japanese) (See Japanese page) 
(in English) power amplifiers / high efficiency / outphasing / wide dynamic range / load modulation / / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 280, MW2020-71, pp. 1-6, Dec. 2020.
Paper # MW2020-71 
Date of Issue 2020-12-03 (MW) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee MW  
Conference Date 2020-12-10 - 2020-12-10 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To MW 
Conference Code 2020-12-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 3.9-GHz-Band GaN HEMT Outphasing Power Amplifier with Reactance-Compensation Compact Combiner 
Sub Title (in English)  
Keyword(1) power amplifiers  
Keyword(2) high efficiency  
Keyword(3) outphasing  
Keyword(4) wide dynamic range  
Keyword(5) load modulation  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Ryoichi Ogasawara  
1st Author's Affiliation The University of Electro-Communications (UEC)
2nd Author's Name Yoichiro Takayama  
2nd Author's Affiliation The University of Electro-Communications (UEC)
3rd Author's Name Ryo Ishikawa  
3rd Author's Affiliation The University of Electro-Communications (UEC)
4th Author's Name Kazuhiko Honjo  
4th Author's Affiliation The University of Electro-Communications (UEC)
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Speaker Author-1 
Date Time 2020-12-10 13:15:00 
Presentation Time 25 minutes 
Registration for MW 
Paper # MW2020-71 
Volume (vol) vol.120 
Number (no) no.280 
Page pp.1-6 
#Pages 6 
Date of Issue 2020-12-03 (MW) 

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