| Paper Abstract and Keywords |
| Presentation |
2020-12-25 13:40
Measurement of Transient Temperature Change Process inside Silicon Wafer using Optical-Interference Contactless Thermometer(OICT)
Yuya Urasaki, Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Optical-Interference Contactless Thermometer(OICT), which was originally developed by our laboratory, is a temperature measurement method that uses light interference. It has feature of a fast response, that temperature change inside the wafer can be seen, and that temperature of the wafer of surface can be measured from the backside of the wafer. Due to this advantage, we have tried to measure the temperature of the wafer of surface during the plasma process with high accuracy and to imitate the MOS transistor to visualize the temperature change inside the device. In order to apply OICT with such characteristics to other fields and to investigate the possibility of temperature measurement, in this study, we worked on improving the Thermal-Optical Coefficient(TOC) of Si. As a result, high accurate TOC measurement results were obtained. The absorption coefficient of Si as a function of temperature was also considered. Next, a continuous pulse current was applied to the Ni film formed on the Si wafer, and a steep temperature change was applied. It was measured with the temperature changed by Joule heat, and it was shown that heating and heat dissipation can be measured with high time resolution. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
OICT / TOC / Temperature measurement / High temperature / / / / |
| Reference Info. |
IEICE Tech. Rep. |
| Paper # |
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| Date of Issue |
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| Download PDF |
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| Conference Information |
| Committee |
OME |
| Conference Date |
2020-12-25 - 2020-12-26 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Okinawaken Seinen Kaikan |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
bio-technology, surface and interfacial phenomena, measurement and observation, electronics, and other researches relating these |
| Paper Information |
| Registration To |
OME |
| Conference Code |
2020-12-OME |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Measurement of Transient Temperature Change Process inside Silicon Wafer using Optical-Interference Contactless Thermometer(OICT) |
| Sub Title (in English) |
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| Keyword(1) |
OICT |
| Keyword(2) |
TOC |
| Keyword(3) |
Temperature measurement |
| Keyword(4) |
High temperature |
| Keyword(5) |
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| Keyword(6) |
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| Keyword(7) |
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| 1st Author's Name |
Yuya Urasaki |
| 1st Author's Affiliation |
Hiroshima University (Hiroshima Univ) |
| 2nd Author's Name |
Hiroaki Hanafusa |
| 2nd Author's Affiliation |
Hiroshima University (Hiroshima Univ) |
| 3rd Author's Name |
Seiichiro Higashi |
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Hiroshima University (Hiroshima Univ) |
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| Speaker |
Author-1 |
| Date Time |
2020-12-25 13:40:00 |
| Presentation Time |
20 minutes |
| Registration for |
OME |
| Paper # |
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| Volume (vol) |
vol.120 |
| Number (no) |
no.307 |
| Page |
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| #Pages |
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| Date of Issue |
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