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| Presentation | 2021-01-29 13:00 DC Characteristics and MOS Interface properties of HfSiOx-gate AlGaN/GaN HEMTs Ryota Ochi (Hokkaido Univ.), Erika Maeda (SIT/NIMS), Toshihide Nabatame (NIMS), Koji Shiozaki (IMaSS), Tamotsu Hashizume (Hokkaido Univ/IMaSS)  ED2020-31 MW2020-84 Link to ES Tech. Rep. Archives: ED2020-31 MW2020-84 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | GaN high-electron-mobility transistors (HEMTs) are very attractive for the fifth generation communication system. To build up a stable MIS gate structure, we have to consider basic properties of insulators such as bandgap, permittivity, breakdown field and chemical stability. HfSiOx has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a high-$kappa$ gate dielectric. The HfSiOx-gate HEMT showed good transfer characteristics with a high transconductance expected from its $kappa$ value and a subthreshold swing of 71mV/dec. For the MOS HEMT diode, we observed excellent C-V characteristics with negligible frequency dispersion. The detailed C-V analysis showed low state densities on the order of $10^{11}cm^{-2}eV^{-1}$ at the HfSiOx/AlGaN interface. In addition, excellent operation stability of the MOS HEMT was observed at high temperatures up to 150$^circ$. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN / GaN / MOS / HEMT / HfSiOx / Interface state / high-κ / | |
| Reference Info. | IEICE Tech. Rep., vol. 120, no. 353, ED2020-31, pp. 22-25, Jan. 2021. | |
| Paper # | ED2020-31 | |
| Date of Issue | 2021-01-22 (ED, MW) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2020-31 MW2020-84 Link to ES Tech. Rep. Archives: ED2020-31 MW2020-84 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2021-01-29 - 2021-01-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2021-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | DC Characteristics and MOS Interface properties of HfSiOx-gate AlGaN/GaN HEMTs |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | GaN |
| Keyword(3) | MOS |
| Keyword(4) | HEMT |
| Keyword(5) | HfSiOx |
| Keyword(6) | Interface state |
| Keyword(7) | high-κ |
| Keyword(8) | |
| 1st Author's Name | Ryota Ochi |
| 1st Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name | Erika Maeda |
| 2nd Author's Affiliation | Shibaura Institute of Technology/National Institute for Materials Science (SIT/NIMS) |
| 3rd Author's Name | Toshihide Nabatame |
| 3rd Author's Affiliation | National Institute for Materials Science (NIMS) |
| 4th Author's Name | Koji Shiozaki |
| 4th Author's Affiliation | Institute of Materials and Systems for Sustainability. Nagoya University (IMaSS) |
| 5th Author's Name | Tamotsu Hashizume |
| 5th Author's Affiliation | Hokkaido University/Institute of Materials and Systems for Sustainability. Nagoya University (Hokkaido Univ/IMaSS) |
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| Speaker | Author-1 |
| Date Time | 2021-01-29 13:00:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2020-31, MW2020-84 |
| Volume (vol) | vol.120 |
| Number (no) | no.353(ED), no.354(MW) |
| Page | pp.22-25 |
| #Pages | 4 |
| Date of Issue | 2021-01-22 (ED, MW) |
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