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Paper Abstract and Keywords
Presentation 2021-05-27 15:40
Fabrication and Evaluation of Single-Electron Devices Formed by Single-Layered Fe Nanodot Array
Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2021-6 CPM2021-6 SDM2021-17
Abstract (in Japanese) (See Japanese page) 
(in English) Recently, novel information processing techniques using nanoscale devices, such as neural networks and reconfigurable computing, have attracted attention. Single-electron devices (SEDs) are expected to be one of the candidates to realize these techniques due to their high functionality and ultra-low-power consumption. Multi-dot SEDs, which consist of many dots, are expected to operate functionally by attaching multiple gates. One relatively easy method to fabricate multi-dot SEDs is using self-assembled nanodot arrays, which are formed in the early stage of metal thin-film growth. In this study, double-gate SEDs comprising a single-layer Fe nanodot array were fabricated, and explored with respect to the electrical characteristics. Although more than hundreds of nanodots present between the source and drain electrodes, clear current oscillations originating from the single-electron effect of a single dot were observed. Furthermore, it was clarified that the charge state of a single dot could be controlled by using two gates, and the gate-capacitance ratio between the dots and the upper and the lower gates varied depending on the three-dimensional structure of the dots.
Keyword (in Japanese) (See Japanese page) 
(in English) Single-Electron Device / Self-Assembled Nanodot Array / Coulomb Blockade Oscillation / Single-Electron Effect / / / /  
Reference Info. IEICE Tech. Rep., vol. 121, no. 44, ED2021-6, pp. 23-26, May 2021.
Paper # ED2021-6 
Date of Issue 2021-05-20 (ED, CPM, SDM) 
ISSN Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2021-6 CPM2021-6 SDM2021-17

Conference Information
Committee ED SDM CPM  
Conference Date 2021-05-27 - 2021-05-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2021-05-ED-SDM-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication and Evaluation of Single-Electron Devices Formed by Single-Layered Fe Nanodot Array 
Sub Title (in English)  
Keyword(1) Single-Electron Device  
Keyword(2) Self-Assembled Nanodot Array  
Keyword(3) Coulomb Blockade Oscillation  
Keyword(4) Single-Electron Effect  
1st Author's Name Takayuki Gyakushi  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Yuki Asai  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Beommo Byun  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Ikuma Amano  
4th Author's Affiliation Hokkaido University (Hokkaido Univ.)
5th Author's Name Atsushi Tsurumaki-Fukuchi  
5th Author's Affiliation Hokkaido University (Hokkaido Univ.)
6th Author's Name Masashi Arita  
6th Author's Affiliation Hokkaido University (Hokkaido Univ.)
7th Author's Name Yasuo Takahashi  
7th Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2021-05-27 15:40:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2021-6, CPM2021-6, SDM2021-17 
Volume (vol) vol.121 
Number (no) no.44(ED), no.45(CPM), no.46(SDM) 
Page pp.23-26 
Date of Issue 2021-05-20 (ED, CPM, SDM) 

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