Paper Abstract and Keywords |
Presentation |
2021-05-27 15:40
Fabrication and Evaluation of Single-Electron Devices Formed by Single-Layered Fe Nanodot Array Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2021-6 CPM2021-6 SDM2021-17 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Recently, novel information processing techniques using nanoscale devices, such as neural networks and reconfigurable computing, have attracted attention. Single-electron devices (SEDs) are expected to be one of the candidates to realize these techniques due to their high functionality and ultra-low-power consumption. Multi-dot SEDs, which consist of many dots, are expected to operate functionally by attaching multiple gates. One relatively easy method to fabricate multi-dot SEDs is using self-assembled nanodot arrays, which are formed in the early stage of metal thin-film growth. In this study, double-gate SEDs comprising a single-layer Fe nanodot array were fabricated, and explored with respect to the electrical characteristics. Although more than hundreds of nanodots present between the source and drain electrodes, clear current oscillations originating from the single-electron effect of a single dot were observed. Furthermore, it was clarified that the charge state of a single dot could be controlled by using two gates, and the gate-capacitance ratio between the dots and the upper and the lower gates varied depending on the three-dimensional structure of the dots. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Single-Electron Device / Self-Assembled Nanodot Array / Coulomb Blockade Oscillation / Single-Electron Effect / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 121, no. 44, ED2021-6, pp. 23-26, May 2021. |
Paper # |
ED2021-6 |
Date of Issue |
2021-05-20 (ED, CPM, SDM) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2021-6 CPM2021-6 SDM2021-17 |
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