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Paper Abstract and Keywords
Presentation 2021-11-12 09:30
[Invited Talk] Formation of high-quality SiC/SiO2 interfaces by suppressing carbon defects
Takuma Kobayashi (Kyoto Univ./Tokyo Tech), Takafumi Okuda, Keita Tachiki, Koji Ito (Kyoto Univ.), Yu-ichiro Matsushita (Tokyo Tech), Tsunenobu Kimoto (Kyoto Univ.) SDM2021-60
Abstract (in Japanese) (See Japanese page) 
(in English) SiC MOSFETs are promising in high-voltage power applications. However, the performance of MOSFETs has been limited by the defects at/near SiC/SiO$_{2}$ interface. We found that a high density of carbon atoms are detected in SiO$_{2}$ after annealing the interface in high-purity Ar, which provides indirect but unambiguous evidence of carbon defects residing at/near the interface. The atomic structures, formation energies, and electronic levels of candidate defects were calculated based on first principles. We demonstrated that a low interface state density of about 10$^{10}$ cm$^{-2}$eV$^{-1}$ could be obtained by avoiding the oxidation of SiC, which is most likely due to the suppression of carbon defects.
Keyword (in Japanese) (See Japanese page) 
(in English) SiC / SiO2 / MOSFET / Interface States / / / /  
Reference Info. IEICE Tech. Rep., vol. 121, no. 235, SDM2021-60, pp. 38-42, Nov. 2021.
Paper # SDM2021-60 
Date of Issue 2021-11-04 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2021-60

Conference Information
Committee SDM  
Conference Date 2021-11-11 - 2021-11-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2021-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Formation of high-quality SiC/SiO2 interfaces by suppressing carbon defects 
Sub Title (in English)  
Keyword(1) SiC  
Keyword(2) SiO2  
Keyword(3) MOSFET  
Keyword(4) Interface States  
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Keyword(6)  
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1st Author's Name Takuma Kobayashi  
1st Author's Affiliation Kyoto University/Tokyo Institute of Technology (Kyoto Univ./Tokyo Tech)
2nd Author's Name Takafumi Okuda  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Keita Tachiki  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Koji Ito  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
5th Author's Name Yu-ichiro Matsushita  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
6th Author's Name Tsunenobu Kimoto  
6th Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-1 
Date Time 2021-11-12 09:30:00 
Presentation Time 60 minutes 
Registration for SDM 
Paper # SDM2021-60 
Volume (vol) vol.121 
Number (no) no.235 
Page pp.38-42 
#Pages 5 
Date of Issue 2021-11-04 (SDM) 

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