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Paper Abstract and Keywords
Presentation 2021-11-26 16:25
Fabrication of Recessed-gate AlGaInN/AlGaN HFETs utilizing a photo-electrochemical (PEC) etching.
Kosaku Ito, Yuto Komatsu, Masachika Toguchi (Hokkaido Univ.), Akiyoshi Inoue, Sakura Tanaka, Makoto Miyoshi (Nagoya Inst. of Tech), Taketomo Sato (Hokkaido Univ.) ED2021-35 CPM2021-69 LQE2021-47
Abstract (in Japanese) (See Japanese page) 
(in English) We utilized photo-electrochemical (PEC) etching for fabrication of recessed-gate AlGaInN/AlGaN MIS HFETs. The PEC reaction currents, corresponding to the etching rate, decreased with time and reached to 0, showing the self-stopping of the etching reaction. From the AFM measurement, the etching depth and RMS value of 5×5 µm region was 13.2 nm and 1.89 nm, respectively, and good surface morphology was obtained. Furthermore, The MIS gate HFET formed with the recessed etching showed good pinch-off characteristics, and the threshold voltage shifted to around 0 V depending on the thickness of the barrier layer.
Keyword (in Japanese) (See Japanese page) 
(in English) Nitride semiconductors / HFET / Recessed-gate / photo-electrochemical etching / / / /  
Reference Info. IEICE Tech. Rep., vol. 121, no. 259, ED2021-35, pp. 91-94, Nov. 2021.
Paper # ED2021-35 
Date of Issue 2021-11-18 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2021-35 CPM2021-69 LQE2021-47

Conference Information
Committee ED CPM LQE  
Conference Date 2021-11-25 - 2021-11-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2021-11-ED-CPM-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of Recessed-gate AlGaInN/AlGaN HFETs utilizing a photo-electrochemical (PEC) etching. 
Sub Title (in English)  
Keyword(1) Nitride semiconductors  
Keyword(2) HFET  
Keyword(3) Recessed-gate  
Keyword(4) photo-electrochemical etching  
Keyword(5)  
Keyword(6)  
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1st Author's Name Kosaku Ito  
1st Author's Affiliation Research Center For Integrated Quantum Electronics, Hokkaido University (Hokkaido Univ.)
2nd Author's Name Yuto Komatsu  
2nd Author's Affiliation Research Center For Integrated Quantum Electronics, Hokkaido University (Hokkaido Univ.)
3rd Author's Name Masachika Toguchi  
3rd Author's Affiliation Research Center For Integrated Quantum Electronics, Hokkaido University (Hokkaido Univ.)
4th Author's Name Akiyoshi Inoue  
4th Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech)
5th Author's Name Sakura Tanaka  
5th Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech)
6th Author's Name Makoto Miyoshi  
6th Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech)
7th Author's Name Taketomo Sato  
7th Author's Affiliation Research Center For Integrated Quantum Electronics, Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2021-11-26 16:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2021-35, CPM2021-69, LQE2021-47 
Volume (vol) vol.121 
Number (no) no.259(ED), no.260(CPM), no.261(LQE) 
Page pp.91-94 
#Pages 4 
Date of Issue 2021-11-18 (ED, CPM, LQE) 

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