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Paper Abstract and Keywords
Presentation 2022-01-07 14:05
Device characteristics of organic floating-gate memories based on n-channel polymer transistors
Naoyuki Nishida, Reitaro Hattori, Takashi Nagase, Takaki Adachi, Kazuyoshi Morikawa, Takashi Kobayashi, Takashi Kobayashi (Osaka Pref. Univ.) OME2021-48
Abstract (in Japanese) (See Japanese page) 
(in English) Use of a charge storage layer composed of a polymer insulator of PMMA and a soluble small-molecule semiconductor of TIPS-pentacene in top-gate organic field-effect transistors (OFETs) based on polymer semiconductors enables the solution processing of nonvolatile memories. Here, we fabricate top-gate n-channel OFET memory devices using a high electron mobility donor-accepter polymer semiconductor of PNDI(2OD)2T by spin-coating processes and investigate their memory characteristics. We found that PNDI(2OD)2T FET memories do not exhibit memory operations in the dark, while threshold voltage shifts are observed by programming under light illumination. It is also observed thar the addition of soluble fullerene molecules of PCBM to the charge storage layer allows improving erasing characteristics.
Keyword (in Japanese) (See Japanese page) 
(in English) Organic field-effect transistor / Nonvolatile organic memory / solution process / donor-acceptor polymer semiconductor / floating gate / / /  
Reference Info. IEICE Tech. Rep., vol. 121, no. 316, OME2021-48, pp. 4-8, Jan. 2022.
Paper # OME2021-48 
Date of Issue 2021-12-31 (OME) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee OME  
Conference Date 2022-01-07 - 2022-01-07 
Place (in Japanese) (See Japanese page) 
Place (in English) CENTRAL ELECTRIC CLUB 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Organic devices, sensors, etc. 
Paper Information
Registration To OME 
Conference Code 2022-01-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Device characteristics of organic floating-gate memories based on n-channel polymer transistors 
Sub Title (in English)  
Keyword(1) Organic field-effect transistor  
Keyword(2) Nonvolatile organic memory  
Keyword(3) solution process  
Keyword(4) donor-acceptor polymer semiconductor  
Keyword(5) floating gate  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Naoyuki Nishida  
1st Author's Affiliation Osaka Prefecture University (Osaka Pref. Univ.)
2nd Author's Name Reitaro Hattori  
2nd Author's Affiliation Osaka Prefecture University (Osaka Pref. Univ.)
3rd Author's Name Takashi Nagase  
3rd Author's Affiliation Osaka Prefecture University (Osaka Pref. Univ.)
4th Author's Name Takaki Adachi  
4th Author's Affiliation Osaka Prefecture University (Osaka Pref. Univ.)
5th Author's Name Kazuyoshi Morikawa  
5th Author's Affiliation Osaka Prefecture University (Osaka Pref. Univ.)
6th Author's Name Takashi Kobayashi  
6th Author's Affiliation Osaka Prefecture University (Osaka Pref. Univ.)
7th Author's Name Takashi Kobayashi  
7th Author's Affiliation Osaka Prefecture University (Osaka Pref. Univ.)
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Speaker Author-1 
Date Time 2022-01-07 14:05:00 
Presentation Time 20 minutes 
Registration for OME 
Paper # OME2021-48 
Volume (vol) vol.121 
Number (no) no.316 
Page pp.4-8 
#Pages 5 
Date of Issue 2021-12-31 (OME) 

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