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| Presentation | 2022-01-07 14:05 Device characteristics of organic floating-gate memories based on n-channel polymer transistors Naoyuki Nishida, Reitaro Hattori, Takashi Nagase, Takaki Adachi, Kazuyoshi Morikawa, Takashi Kobayashi, Takashi Kobayashi (Osaka Pref. Univ.)  OME2021-48 Link to ES Tech. Rep. Archives: OME2021-48 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Use of a charge storage layer composed of a polymer insulator of PMMA and a soluble small-molecule semiconductor of TIPS-pentacene in top-gate organic field-effect transistors (OFETs) based on polymer semiconductors enables the solution processing of nonvolatile memories. Here, we fabricate top-gate n-channel OFET memory devices using a high electron mobility donor-accepter polymer semiconductor of PNDI(2OD)2T by spin-coating processes and investigate their memory characteristics. We found that PNDI(2OD)2T FET memories do not exhibit memory operations in the dark, while threshold voltage shifts are observed by programming under light illumination. It is also observed thar the addition of soluble fullerene molecules of PCBM to the charge storage layer allows improving erasing characteristics. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Organic field-effect transistor / Nonvolatile organic memory / solution process / donor-acceptor polymer semiconductor / floating gate / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 121, no. 316, OME2021-48, pp. 4-8, Jan. 2022. | |
| Paper # | OME2021-48 | |
| Date of Issue | 2021-12-31 (OME) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | OME2021-48 Link to ES Tech. Rep. Archives: OME2021-48 |
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| Conference Information | |
| Committee | OME |
| Conference Date | 2022-01-07 - 2022-01-07 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | CENTRAL ELECTRIC CLUB |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Organic devices, sensors, etc. |
| Paper Information | |
| Registration To | OME |
| Conference Code | 2022-01-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Device characteristics of organic floating-gate memories based on n-channel polymer transistors |
| Sub Title (in English) | |
| Keyword(1) | Organic field-effect transistor |
| Keyword(2) | Nonvolatile organic memory |
| Keyword(3) | solution process |
| Keyword(4) | donor-acceptor polymer semiconductor |
| Keyword(5) | floating gate |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Naoyuki Nishida |
| 1st Author's Affiliation | Osaka Prefecture University (Osaka Pref. Univ.) |
| 2nd Author's Name | Reitaro Hattori |
| 2nd Author's Affiliation | Osaka Prefecture University (Osaka Pref. Univ.) |
| 3rd Author's Name | Takashi Nagase |
| 3rd Author's Affiliation | Osaka Prefecture University (Osaka Pref. Univ.) |
| 4th Author's Name | Takaki Adachi |
| 4th Author's Affiliation | Osaka Prefecture University (Osaka Pref. Univ.) |
| 5th Author's Name | Kazuyoshi Morikawa |
| 5th Author's Affiliation | Osaka Prefecture University (Osaka Pref. Univ.) |
| 6th Author's Name | Takashi Kobayashi |
| 6th Author's Affiliation | Osaka Prefecture University (Osaka Pref. Univ.) |
| 7th Author's Name | Takashi Kobayashi |
| 7th Author's Affiliation | Osaka Prefecture University (Osaka Pref. Univ.) |
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| Speaker | Author-1 |
| Date Time | 2022-01-07 14:05:00 |
| Presentation Time | 20 minutes |
| Registration for | OME |
| Paper # | OME2021-48 |
| Volume (vol) | vol.121 |
| Number (no) | no.316 |
| Page | pp.4-8 |
| #Pages | 5 |
| Date of Issue | 2021-12-31 (OME) |
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