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| Presentation | 2022-01-31 15:30 [Invited Talk] Novel Analog in-Memory Computing with < 1nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology Yoshiyuki Kurokawa, Haruyuki Baba, Satoru Ohshita, Toshiki Hamada, Yoshinori Ando, Ryota Hodo, Toshikazu Ono, Takashi Hirose, Hitoshi Kunitake, Tsutomu Murakawa (Semiconductor Energy Lab.), Toru Nakura (Fukuoka Univ.), Masaharu Kobayashi (Tokyo Univ.), Hiroshi Yoshida, Min-Cheng Chen (PSMC), Ming-Han Liao (National Taiwan Univ.), Shou-Zen Chang (PSMC), Shunpei Yamazaki (Semiconductor Energy Lab.)  SDM2021-72 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have successfully demonstrated high-efficiency analog in-memory computing (AiMC) chips, which are monolithically fabricated with Si CMOS + CAAC-IGZO FETs. The AiMC chips utilize low-leakage CAAC-IGZO FETs that retain the gate voltage of Si CMOS devices to drive them in the subthreshold region and achieve an ultra-low cell current (< 1 nA/cell) and an operation efficiency of 143.9 TOPS/W. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | CAAC-IGZO FET/Si CMOS Technology / Analog in-Memory Computing / Oxide Semiconductor / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 121, no. 365, SDM2021-72, pp. 16-19, Jan. 2022. | |
| Paper # | SDM2021-72 | |
| Date of Issue | 2022-01-24 (SDM) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2021-72 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2022-01-31 - 2022-01-31 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Online |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2022-01-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Novel Analog in-Memory Computing with < 1nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology |
| Sub Title (in English) | |
| Keyword(1) | CAAC-IGZO FET/Si CMOS Technology |
| Keyword(2) | Analog in-Memory Computing |
| Keyword(3) | Oxide Semiconductor |
| Keyword(4) | |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yoshiyuki Kurokawa |
| 1st Author's Affiliation | Semiconductor Energy Laboratory (Semiconductor Energy Lab.) |
| 2nd Author's Name | Haruyuki Baba |
| 2nd Author's Affiliation | Semiconductor Energy Laboratory (Semiconductor Energy Lab.) |
| 3rd Author's Name | Satoru Ohshita |
| 3rd Author's Affiliation | Semiconductor Energy Laboratory (Semiconductor Energy Lab.) |
| 4th Author's Name | Toshiki Hamada |
| 4th Author's Affiliation | Semiconductor Energy Laboratory (Semiconductor Energy Lab.) |
| 5th Author's Name | Yoshinori Ando |
| 5th Author's Affiliation | Semiconductor Energy Laboratory (Semiconductor Energy Lab.) |
| 6th Author's Name | Ryota Hodo |
| 6th Author's Affiliation | Semiconductor Energy Laboratory (Semiconductor Energy Lab.) |
| 7th Author's Name | Toshikazu Ono |
| 7th Author's Affiliation | Semiconductor Energy Laboratory (Semiconductor Energy Lab.) |
| 8th Author's Name | Takashi Hirose |
| 8th Author's Affiliation | Semiconductor Energy Laboratory (Semiconductor Energy Lab.) |
| 9th Author's Name | Hitoshi Kunitake |
| 9th Author's Affiliation | Semiconductor Energy Laboratory (Semiconductor Energy Lab.) |
| 10th Author's Name | Tsutomu Murakawa |
| 10th Author's Affiliation | Semiconductor Energy Laboratory (Semiconductor Energy Lab.) |
| 11th Author's Name | Toru Nakura |
| 11th Author's Affiliation | Fukuoka University (Fukuoka Univ.) |
| 12th Author's Name | Masaharu Kobayashi |
| 12th Author's Affiliation | Tokyo University (Tokyo Univ.) |
| 13th Author's Name | Hiroshi Yoshida |
| 13th Author's Affiliation | Powerchip Semiconductor Manufacturing Corporation (PSMC) |
| 14th Author's Name | Min-Cheng Chen |
| 14th Author's Affiliation | Powerchip Semiconductor Manufacturing Corporation (PSMC) |
| 15th Author's Name | Ming-Han Liao |
| 15th Author's Affiliation | National Taiwan University (National Taiwan Univ.) |
| 16th Author's Name | Shou-Zen Chang |
| 16th Author's Affiliation | Powerchip Semiconductor Manufacturing Corporation (PSMC) |
| 17th Author's Name | Shunpei Yamazaki |
| 17th Author's Affiliation | Semiconductor Energy Laboratory (Semiconductor Energy Lab.) |
| Speaker | Author-1 |
| Date Time | 2022-01-31 15:30:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2021-72 |
| Volume (vol) | vol.121 |
| Number (no) | no.365 |
| Page | pp.16-19 |
| #Pages | 4 |
| Date of Issue | 2022-01-24 (SDM) |
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