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Paper Abstract and Keywords
Presentation 2022-01-31 13:15
[Invited Talk] ****
Tomoya Saito, Takashi Ito, Yasuhiko Taito, Kenichiro Sonoda, Genta Watanabe, Ken Matsubara, Akihiko Kanda, Takahiro Shimoi, Koichi Takeda, Takashi Kono (Renesas) SDM2021-68
Abstract (in Japanese) (See Japanese page) 
(in English) We present the low energy write techniques and measurement results of a 20Mb embedded STT-MRAM test chip in 16nm FinFET logic process. Self-termination write schemes with slope write voltage and current pulse and variable parallel bit write sequence are proposed to reduce total write energy consumption by terminating write pulse adaptively according to the characteristics of each STT-MRAM cell and achieves 72% write energy reduction and 50% total write pulse time reduction.
Keyword (in Japanese) (See Japanese page) 
(in English) STT-MRAM / 16nm / embedded / Low power write / Self-termination Write / / /  
Reference Info. IEICE Tech. Rep., vol. 121, no. 365, SDM2021-68, pp. 1-4, Jan. 2022.
Paper # SDM2021-68 
Date of Issue 2022-01-24 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2022-01-31 - 2022-01-31 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2022-01-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) **** 
Sub Title (in English)  
Keyword(1) STT-MRAM  
Keyword(2) 16nm  
Keyword(3) embedded  
Keyword(4) Low power write  
Keyword(5) Self-termination Write  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Tomoya Saito  
1st Author's Affiliation Renesas Electronics (Renesas)
2nd Author's Name Takashi Ito  
2nd Author's Affiliation Renesas Electronics (Renesas)
3rd Author's Name Yasuhiko Taito  
3rd Author's Affiliation Renesas Electronics (Renesas)
4th Author's Name Kenichiro Sonoda  
4th Author's Affiliation Renesas Electronics (Renesas)
5th Author's Name Genta Watanabe  
5th Author's Affiliation Renesas Electronics (Renesas)
6th Author's Name Ken Matsubara  
6th Author's Affiliation Renesas Electronics (Renesas)
7th Author's Name Akihiko Kanda  
7th Author's Affiliation Renesas Electronics (Renesas)
8th Author's Name Takahiro Shimoi  
8th Author's Affiliation Renesas Electronics (Renesas)
9th Author's Name Koichi Takeda  
9th Author's Affiliation Renesas Electronics (Renesas)
10th Author's Name Takashi Kono  
10th Author's Affiliation Renesas Electronics (Renesas)
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Speaker Author-1 
Date Time 2022-01-31 13:15:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2021-68 
Volume (vol) vol.121 
Number (no) no.365 
Page pp.1-4 
#Pages 4 
Date of Issue 2022-01-24 (SDM) 

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