Paper Abstract and Keywords |
Presentation |
2022-04-15 15:15
Distortion characteristics comparison of AlGaN-GaN HEMTs between SiC and GaN Substrates Atsushi Moriwaki, Shinji Hara (NU) WPT2022-10 MW2022-10 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this report, we propose a new intermodulation distortion (IMD) measurement method to evaluate the influence of current collapse on the linearity of GaN HEMTs, and compare the third-order intermodulation distortion (IM3) performance of GaN HEMTs between different substrates and with and without field plates (FPs) using this measurement system. GaN HEMTs on GaN substrates are expected to have better linearity in addition to improved power characteristics due to fewer defect-induced current collapses compared to GaN HEMTs on SiC substrates, and the IM3 measurement results are consistent with expectations. The IM3 of GaN HEMTs on GaN substrates without FPs was comparable to that of GaN HEMTs on SiC substrates with FPs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
HEMT / GaN substrate / SiC substrate / Current collapse / IMD / / / |
Reference Info. |
IEICE Tech. Rep., vol. 122, no. 2, MW2022-10, pp. 35-39, April 2022. |
Paper # |
MW2022-10 |
Date of Issue |
2022-04-08 (WPT, MW) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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WPT2022-10 MW2022-10 |
Conference Information |
Committee |
MW WPT |
Conference Date |
2022-04-15 - 2022-04-15 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Wireless Power Transfer, Microwave |
Paper Information |
Registration To |
MW |
Conference Code |
2022-04-MW-WPT |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Distortion characteristics comparison of AlGaN-GaN HEMTs between SiC and GaN Substrates |
Sub Title (in English) |
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HEMT |
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GaN substrate |
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SiC substrate |
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Current collapse |
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IMD |
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1st Author's Name |
Atsushi Moriwaki |
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2nd Author's Name |
Shinji Hara |
2nd Author's Affiliation |
Nagoya University (NU) |
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Speaker |
Author-2 |
Date Time |
2022-04-15 15:15:00 |
Presentation Time |
25 minutes |
Registration for |
MW |
Paper # |
WPT2022-10, MW2022-10 |
Volume (vol) |
vol.122 |
Number (no) |
no.1(WPT), no.2(MW) |
Page |
pp.35-39 |
#Pages |
5 |
Date of Issue |
2022-04-08 (WPT, MW) |
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