Paper Abstract and Keywords |
Presentation |
2022-04-23 10:20
EDX evaluation of Mg atoms on Mg-induced lateral crystallization of amorphous Ge/SiO2 Atsuki Morimoto, Rikuto Abe, Anna Hirai, Towa Hirai, Kenichiro Takakura, Isao Tsunoda (NIT(KOSEN),Kumamoto College) SDM2022-10 OME2022-10 Link to ES Tech. Rep. Archives: SDM2022-10 OME2022-10 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have investigated low temperature solid phase crystallization of amorphous Ge on insulating substrate. High temperature annealing is necessary to obtain the polycrystalline Ge by conventional solid phase crystallization. In order to enhance the solid phase crystallization, Mg induced lateral crystallization of amorphous Ge on insulating substrate was performed. As a result, amorphous Ge was crystallized around Mg pattern after annealing at 350℃ for 60 min. In addition, it was found that the minimum Mg concentration of about 35 % is required to cause the Mg induced lateral crystallization for amorphous Ge. To enhance the Mg induced lateral crystallization by using two step annealing, Mg induced lateral crystallization length was significantly enhanced (~ 6 times). This enhancement was attributed to the ease of Mg atoms diffusion into amorphous Ge region. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Germanium / Solid phase crystallization / Metal induced crystallization / Two-step annealing / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 122, no. 8, SDM2022-10, pp. 47-50, April 2022. |
Paper # |
SDM2022-10 |
Date of Issue |
2022-04-15 (SDM, OME) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2022-10 OME2022-10 Link to ES Tech. Rep. Archives: SDM2022-10 OME2022-10 |
Conference Information |
Committee |
OME SDM |
Conference Date |
2022-04-22 - 2022-04-23 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Takachiho Hall |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Thin film devices (Si, compound, organic, flexible), Biotechnology, Materials, Characterization, etc. |
Paper Information |
Registration To |
SDM |
Conference Code |
2022-04-OME-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
EDX evaluation of Mg atoms on Mg-induced lateral crystallization of amorphous Ge/SiO2 |
Sub Title (in English) |
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Keyword(1) |
Germanium |
Keyword(2) |
Solid phase crystallization |
Keyword(3) |
Metal induced crystallization |
Keyword(4) |
Two-step annealing |
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1st Author's Name |
Atsuki Morimoto |
1st Author's Affiliation |
National Institute of Technology(KOSEN), Kumamoto College (NIT(KOSEN),Kumamoto College) |
2nd Author's Name |
Rikuto Abe |
2nd Author's Affiliation |
National Institute of Technology(KOSEN), Kumamoto College (NIT(KOSEN),Kumamoto College) |
3rd Author's Name |
Anna Hirai |
3rd Author's Affiliation |
National Institute of Technology(KOSEN), Kumamoto College (NIT(KOSEN),Kumamoto College) |
4th Author's Name |
Towa Hirai |
4th Author's Affiliation |
National Institute of Technology(KOSEN), Kumamoto College (NIT(KOSEN),Kumamoto College) |
5th Author's Name |
Kenichiro Takakura |
5th Author's Affiliation |
National Institute of Technology(KOSEN), Kumamoto College (NIT(KOSEN),Kumamoto College) |
6th Author's Name |
Isao Tsunoda |
6th Author's Affiliation |
National Institute of Technology(KOSEN), Kumamoto College (NIT(KOSEN),Kumamoto College) |
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Speaker |
Author-1 |
Date Time |
2022-04-23 10:20:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2022-10, OME2022-10 |
Volume (vol) |
vol.122 |
Number (no) |
no.8(SDM), no.9(OME) |
Page |
pp.47-50 |
#Pages |
4 |
Date of Issue |
2022-04-15 (SDM, OME) |
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