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Paper Abstract and Keywords
Presentation 2022-04-23 10:20
EDX evaluation of Mg atoms on Mg-induced lateral crystallization of amorphous Ge/SiO2
Atsuki Morimoto, Rikuto Abe, Anna Hirai, Towa Hirai, Kenichiro Takakura, Isao Tsunoda (NIT(KOSEN),Kumamoto College) SDM2022-10 OME2022-10
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated low temperature solid phase crystallization of amorphous Ge on insulating substrate. High temperature annealing is necessary to obtain the polycrystalline Ge by conventional solid phase crystallization. In order to enhance the solid phase crystallization, Mg induced lateral crystallization of amorphous Ge on insulating substrate was performed. As a result, amorphous Ge was crystallized around Mg pattern after annealing at 350℃ for 60 min. In addition, it was found that the minimum Mg concentration of about 35 % is required to cause the Mg induced lateral crystallization for amorphous Ge. To enhance the Mg induced lateral crystallization by using two step annealing, Mg induced lateral crystallization length was significantly enhanced (~ 6 times). This enhancement was attributed to the ease of Mg atoms diffusion into amorphous Ge region.
Keyword (in Japanese) (See Japanese page) 
(in English) Germanium / Solid phase crystallization / Metal induced crystallization / Two-step annealing / / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 8, SDM2022-10, pp. 47-50, April 2022.
Paper # SDM2022-10 
Date of Issue 2022-04-15 (SDM, OME) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2022-10 OME2022-10

Conference Information
Committee OME SDM  
Conference Date 2022-04-22 - 2022-04-23 
Place (in Japanese) (See Japanese page) 
Place (in English) Takachiho Hall 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Thin film devices (Si, compound, organic, flexible), Biotechnology, Materials, Characterization, etc. 
Paper Information
Registration To SDM 
Conference Code 2022-04-OME-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) EDX evaluation of Mg atoms on Mg-induced lateral crystallization of amorphous Ge/SiO2 
Sub Title (in English)  
Keyword(1) Germanium  
Keyword(2) Solid phase crystallization  
Keyword(3) Metal induced crystallization  
Keyword(4) Two-step annealing  
Keyword(5)  
Keyword(6)  
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Keyword(8)  
1st Author's Name Atsuki Morimoto  
1st Author's Affiliation National Institute of Technology(KOSEN), Kumamoto College (NIT(KOSEN),Kumamoto College)
2nd Author's Name Rikuto Abe  
2nd Author's Affiliation National Institute of Technology(KOSEN), Kumamoto College (NIT(KOSEN),Kumamoto College)
3rd Author's Name Anna Hirai  
3rd Author's Affiliation National Institute of Technology(KOSEN), Kumamoto College (NIT(KOSEN),Kumamoto College)
4th Author's Name Towa Hirai  
4th Author's Affiliation National Institute of Technology(KOSEN), Kumamoto College (NIT(KOSEN),Kumamoto College)
5th Author's Name Kenichiro Takakura  
5th Author's Affiliation National Institute of Technology(KOSEN), Kumamoto College (NIT(KOSEN),Kumamoto College)
6th Author's Name Isao Tsunoda  
6th Author's Affiliation National Institute of Technology(KOSEN), Kumamoto College (NIT(KOSEN),Kumamoto College)
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Speaker Author-1 
Date Time 2022-04-23 10:20:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2022-10, OME2022-10 
Volume (vol) vol.122 
Number (no) no.8(SDM), no.9(OME) 
Page pp.47-50 
#Pages 4 
Date of Issue 2022-04-15 (SDM, OME) 

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