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Paper Abstract and Keywords
Presentation 2022-05-27 16:15
Wet etching of GaN utilizing a photo-electrochemical reaction for functional materials
Taketomo Sato, Masachika Toguchi (Hokkaido Univ.) ED2022-13 CPM2022-7 SDM2022-20
Abstract (in Japanese) (See Japanese page) 
(in English) A gallium nitride (GaN) porous structure was formed by wet etching utilizing electrochemical reactions. The refractive index of the GaN porous layer can be controlled by the porosity or aperture ratio, and its optical reflectance decreases depending on that. The incident-photon-to-current conversion efficiency (IPCE) of the interface between the GaN porous structure and the electrolyte increased by about 40% compared to that obtained on the unprocessed sample, and the basic absorption edge of the GaN porous structure was shifted in the long-wavelength direction. These characteristics of the GaN porous structure that has the high crystal quality are useful as a functional material.
Keyword (in Japanese) (See Japanese page) 
(in English) Gallium Nitride / Electrochemical Etching / Porous Structure / / / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 52, ED2022-13, pp. 25-28, May 2022.
Paper # ED2022-13 
Date of Issue 2022-05-20 (ED, CPM, SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2022-13 CPM2022-7 SDM2022-20

Conference Information
Committee SDM ED CPM  
Conference Date 2022-05-27 - 2022-05-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional Device Materials, Fabrication, Characterization, and Related Technology 
Paper Information
Registration To ED 
Conference Code 2022-05-SDM-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Wet etching of GaN utilizing a photo-electrochemical reaction for functional materials 
Sub Title (in English)  
Keyword(1) Gallium Nitride  
Keyword(2) Electrochemical Etching  
Keyword(3) Porous Structure  
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1st Author's Name Taketomo Sato  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Masachika Toguchi  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2022-05-27 16:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2022-13, CPM2022-7, SDM2022-20 
Volume (vol) vol.122 
Number (no) no.52(ED), no.53(CPM), no.54(SDM) 
Page pp.25-28 
#Pages 4 
Date of Issue 2022-05-20 (ED, CPM, SDM) 

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