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Paper Abstract and Keywords
Presentation 2022-06-21 13:40
Self-formation of Ge1-xSnx nanodots on insulator for multi-layer quantum dots structure
Kaoru Hashimoto, Shigehisa Shibayama, Koji Asaka, Osamu Nakatsuka (Nagoya Univ.) SDM2022-25
Abstract (in Japanese) (See Japanese page) 
(in English) Germanium-tin (Ge1−xSnx) quantum dots (QDs) are promising materials as a light-emitting device for optical wiring technology of LSI (1.55-μm waveband) because of those variable bandgaps by the Sn content and the dot size, and the transformability to the direct transition semiconductor for the Sn content over 10%. In this study, to realize the multilayer QDs structure, we examined the self-formation of Ge1−xSnx QDs on insulators by the control of surface migration of Sn atoms. The results revealed the control of the introduced Sn content and the deposition temperature of Ge1−xSnx enables the self-formation of the Ge1−xSnx microcrystals (grains) with Sn content over 10%. Importantly, for the 5-nm-thick deposition case, by controlling the deposition temperature, we can form the isolated nanocrystals but coexisting amorphous layer and the island structure with nanocrystals in contact with each other. This suggests the thinner Ge1−xSnx deposition under a further controlled condition will realize the isolated Ge1−xSnx QDs structure.
Keyword (in Japanese) (See Japanese page) 
(in English) Ge1-xSnx / quantum dots / self-formation / surface migration / / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 84, SDM2022-25, pp. 5-8, June 2022.
Paper # SDM2022-25 
Date of Issue 2022-06-14 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2022-06-21 - 2022-06-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Univ. VBL3F 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices, Memories, and Power Devices 
Paper Information
Registration To SDM 
Conference Code 2022-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Self-formation of Ge1-xSnx nanodots on insulator for multi-layer quantum dots structure 
Sub Title (in English)  
Keyword(1) Ge1-xSnx  
Keyword(2) quantum dots  
Keyword(3) self-formation  
Keyword(4) surface migration  
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1st Author's Name Kaoru Hashimoto  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Shigehisa Shibayama  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Koji Asaka  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Osamu Nakatsuka  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2022-06-21 13:40:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2022-25 
Volume (vol) vol.122 
Number (no) no.84 
Page pp.5-8 
#Pages 4 
Date of Issue 2022-06-14 (SDM) 

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