| Paper Abstract and Keywords |
| Presentation |
2022-09-15 11:00
Power characteristics of 5.8GHz band 5W rectenna with a GaAs GAD Naoki Furutani, Kaito Uchiyama, Fumiya Komatsu, Kouichi Kikkawa, Naoki Sakai, Kenji Itoh (KIT) MW2022-74 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
In this report, power characteristics of the 5.8 GHz band 5 W rectenna are discussed. The rectenna is consisting of the gated anode diode (GAD) configured with the GaAs E-pHEMT for improving power characteristics. At first, a measured DC characteristic of the GAD and its saturation is demonstrated. In the saturation region, a differential resistance of the GAD is increased and makes degradation of rectification efficiency. In the discussions, GAD currents’ waveforms with different gate widths are demonstrated, and their influences on power characteristics are discussed. As a result, gate width of 1.2 mm is designed for the rectenna. In experimental investigation, the rectenna consisting of a GaAs rectenna IC and a high-impedance antenna is fabricated on the aluminum nitride substrate that has low thermal resistivity as metal plates. Measured rectification efficiency of 85.2 % at input power of 5 W is obtained. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
RF rectifier / Gated anode diode / Dipole antenna / Rectenna / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 122, no. 183, MW2022-74, pp. 30-35, Sept. 2022. |
| Paper # |
MW2022-74 |
| Date of Issue |
2022-09-07 (MW) |
| ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
MW2022-74 |
| Conference Information |
| Committee |
AP MW |
| Conference Date |
2022-09-14 - 2022-09-16 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
The Museum of Art, EHIME |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Microwave, Millimeter wave |
| Paper Information |
| Registration To |
MW |
| Conference Code |
2022-09-AP-MW |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Power characteristics of 5.8GHz band 5W rectenna with a GaAs GAD |
| Sub Title (in English) |
|
| Keyword(1) |
RF rectifier |
| Keyword(2) |
Gated anode diode |
| Keyword(3) |
Dipole antenna |
| Keyword(4) |
Rectenna |
| Keyword(5) |
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| Keyword(6) |
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| Keyword(7) |
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| Keyword(8) |
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| 1st Author's Name |
Naoki Furutani |
| 1st Author's Affiliation |
Kanazawa Institute of Technology (KIT) |
| 2nd Author's Name |
Kaito Uchiyama |
| 2nd Author's Affiliation |
Kanazawa Institute of Technology (KIT) |
| 3rd Author's Name |
Fumiya Komatsu |
| 3rd Author's Affiliation |
Kanazawa Institute of Technology (KIT) |
| 4th Author's Name |
Kouichi Kikkawa |
| 4th Author's Affiliation |
Kanazawa Institute of Technology (KIT) |
| 5th Author's Name |
Naoki Sakai |
| 5th Author's Affiliation |
Kanazawa Institute of Technology (KIT) |
| 6th Author's Name |
Kenji Itoh |
| 6th Author's Affiliation |
Kanazawa Institute of Technology (KIT) |
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| Speaker |
Author-1 |
| Date Time |
2022-09-15 11:00:00 |
| Presentation Time |
25 minutes |
| Registration for |
MW |
| Paper # |
MW2022-74 |
| Volume (vol) |
vol.122 |
| Number (no) |
no.183 |
| Page |
pp.30-35 |
| #Pages |
6 |
| Date of Issue |
2022-09-07 (MW) |