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Presentation 2022-10-19 17:20
A study on threshold voltage control of MFSFET utilizing ferroelectric nondoped HfO2 thin films
Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech) SDM2022-63
Abstract (in Japanese) (See Japanese page) 
(in English) Ferroelectric HfO2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due to its Si-incompatibility, and are expected to be applied for metal-ferroelectric-semiconductor field-effect-transistors (MFSFETs). However, SiO2 interfacial layer (IL) was unintentionally formed between HfO2 and Si substrate, because of high crystallization temperature caused by the doping such as Si or Zr. In this study, we investigated the threshold voltage (VTH) control of MFSFET utilizing 5 nm-thick ferroelectric nondoped HfO2. It was found that the frequency dispersion was suppressed by introducing field oxide, which reduced the wet etching damage. MFSFET was fabricated with deposition rate of 6.0 nm/min, and subthreshold swing (SS) of 107 mV/dec. and saturation mobility (μsat) of 136 cm2/(Vs) were obtained. Furthermore, pulse input of ±3.5 V/10 μs found to control the VTH. The memory window (MW) of 0.34 V was obtained by the pulse amplitude and width of ±3.5 V/100 ms.
Keyword (in Japanese) (See Japanese page) 
(in English) Ferroelectric nondoped HfO2 / RF magnetron sputtering / Threshold voltage control / / / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 215, SDM2022-63, pp. 38-42, Oct. 2022.
Paper # SDM2022-63 
Date of Issue 2022-10-12 (SDM) 
ISSN Online edition: ISSN 2432-6380
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Conference Information
Committee SDM  
Conference Date 2022-10-19 - 2022-10-19 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2022-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A study on threshold voltage control of MFSFET utilizing ferroelectric nondoped HfO2 thin films 
Sub Title (in English)  
Keyword(1) Ferroelectric nondoped HfO2  
Keyword(2) RF magnetron sputtering  
Keyword(3) Threshold voltage control  
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1st Author's Name Masakazu Tanuma  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
2nd Author's Name Joong-Won Shin  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
3rd Author's Name Shun-ichiro Ohmi  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
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Speaker Author-1 
Date Time 2022-10-19 17:20:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2022-63 
Volume (vol) vol.122 
Number (no) no.215 
Page pp.38-42 
#Pages
Date of Issue 2022-10-12 (SDM) 


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