Paper Abstract and Keywords |
Presentation |
2022-10-19 17:20
A study on threshold voltage control of MFSFET utilizing ferroelectric nondoped HfO2 thin films Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech) SDM2022-63 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Ferroelectric HfO2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due to its Si-incompatibility, and are expected to be applied for metal-ferroelectric-semiconductor field-effect-transistors (MFSFETs). However, SiO2 interfacial layer (IL) was unintentionally formed between HfO2 and Si substrate, because of high crystallization temperature caused by the doping such as Si or Zr. In this study, we investigated the threshold voltage (VTH) control of MFSFET utilizing 5 nm-thick ferroelectric nondoped HfO2. It was found that the frequency dispersion was suppressed by introducing field oxide, which reduced the wet etching damage. MFSFET was fabricated with deposition rate of 6.0 nm/min, and subthreshold swing (SS) of 107 mV/dec. and saturation mobility (μsat) of 136 cm2/(Vs) were obtained. Furthermore, pulse input of ±3.5 V/10 μs found to control the VTH. The memory window (MW) of 0.34 V was obtained by the pulse amplitude and width of ±3.5 V/100 ms. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Ferroelectric nondoped HfO2 / RF magnetron sputtering / Threshold voltage control / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 122, no. 215, SDM2022-63, pp. 38-42, Oct. 2022. |
Paper # |
SDM2022-63 |
Date of Issue |
2022-10-12 (SDM) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2022-63 |
Conference Information |
Committee |
SDM |
Conference Date |
2022-10-19 - 2022-10-19 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Online |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process Science and New Process Technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2022-10-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
A study on threshold voltage control of MFSFET utilizing ferroelectric nondoped HfO2 thin films |
Sub Title (in English) |
|
Keyword(1) |
Ferroelectric nondoped HfO2 |
Keyword(2) |
RF magnetron sputtering |
Keyword(3) |
Threshold voltage control |
Keyword(4) |
|
Keyword(5) |
|
Keyword(6) |
|
Keyword(7) |
|
Keyword(8) |
|
1st Author's Name |
Masakazu Tanuma |
1st Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech) |
2nd Author's Name |
Joong-Won Shin |
2nd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech) |
3rd Author's Name |
Shun-ichiro Ohmi |
3rd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Tech) |
4th Author's Name |
|
4th Author's Affiliation |
() |
5th Author's Name |
|
5th Author's Affiliation |
() |
6th Author's Name |
|
6th Author's Affiliation |
() |
7th Author's Name |
|
7th Author's Affiliation |
() |
8th Author's Name |
|
8th Author's Affiliation |
() |
9th Author's Name |
|
9th Author's Affiliation |
() |
10th Author's Name |
|
10th Author's Affiliation |
() |
11th Author's Name |
|
11th Author's Affiliation |
() |
12th Author's Name |
|
12th Author's Affiliation |
() |
13th Author's Name |
|
13th Author's Affiliation |
() |
14th Author's Name |
|
14th Author's Affiliation |
() |
15th Author's Name |
|
15th Author's Affiliation |
() |
16th Author's Name |
|
16th Author's Affiliation |
() |
17th Author's Name |
|
17th Author's Affiliation |
() |
18th Author's Name |
|
18th Author's Affiliation |
() |
19th Author's Name |
|
19th Author's Affiliation |
() |
20th Author's Name |
|
20th Author's Affiliation |
() |
Speaker |
Author-1 |
Date Time |
2022-10-19 17:20:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2022-63 |
Volume (vol) |
vol.122 |
Number (no) |
no.215 |
Page |
pp.38-42 |
#Pages |
5 |
Date of Issue |
2022-10-12 (SDM) |
|