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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Shunichiro Ohmi (Tokyo Inst. of Tech.)
Vice Chair Tatsuya Usami (ASM Japan)
Secretary Tomoyuki Suwa (Tohoku Univ.), Taiji Noda (Panasonic)
Assistant Takuji Hosoi (Kwansei Gakuin Univ.), Takuya Futase (SanDisk)

Conference Date Wed, Oct 19, 2022 09:30 - 17:45
Topics Process Science and New Process Technology 
Conference Place  
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Registration Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM.

Wed, Oct 19 AM 
09:30 - 10:20
  09:30-10:10 ( 40 min. )
  10:10-10:20 Break ( 10 min. )
Wed, Oct 19 PM 
10:20 - 17:45
(1) 10:20-11:10 [Invited Talk]
Needs for X-ray Optical Elements
-- Expectations for New Process Technology --
SDM2022-54
Wataru Yashiro (Tohoku Univ.)
(2) 11:10-11:35 Resistance Masurement Technology for Statistical Analysis of Thin Films Materials for Emerging Memory with High Accuracy and Wide Range SDM2022-55 Hidemi Mitsuda, Ryousuke Tenman, Takezou Mawaki, Rihito Kuroda (Tohoku Univ)
(3) 11:35-12:00 A study on threshold voltage control of MFSFET with ultrathin ferroelectric nondoped HfO2 gate insulator for analog memory applications SDM2022-56 Joong-Won Shin, Masakazu Tanuma, Shun-ichiro Ohmi (Tokyo Tech)
  12:00-13:15 Lunch Break ( 75 min. )
(4) 13:15-14:05 [Invited Talk]
Fabrication of monolayer h-BN/LaB6 heterostructure using thermally aggregation method and its evaluation SDM2022-57
Katsumi Nagaoka, Takashi Aizawa, Shun-ichiro Ohmi (NIMS)
(5) 14:05-14:30 Evaluation and analysis of ferroelectric BiFeO3 thin film surface SDM2022-58 Fuminobu Imaizumi (NIT, Oyama)
(6) 14:30-14:55 The effect of microstructures of CrSiC thin film resistors on the electrical properties SDM2022-59 Nozomi Ito, Kazuyoshi Maekawa, Yuji Takahashi, Takashi Tonegawa (Renesas)
  14:55-15:15 Break ( 20 min. )
(7) 15:15-16:05 [Invited Talk]
Fabrication of organic ferroelectric transistors using paper substrates and application to organic solar cells SDM2022-60
Park Byung Eun (University of Seoul)
(8) 16:05-16:30 A study on low-voltage operation of pentacene-based floating-gate memory utilizing Ar/N2-plasma nitridation with N-doped LaB6 metal and high-k LaBxNy insulator SDM2022-61 Eun-Ki Hong, Shun-ichiro Ohmi (Tokyo Tech.)
(9) 16:30-17:20 [Invited Talk]
Reliability improvement of SiC MOSFET by high-temperature CO2 annealing SDM2022-62
Takuji Hosoi (Kwansei Gakuin Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
(10) 17:20-17:45 A study on threshold voltage control of MFSFET utilizing ferroelectric nondoped HfO2 thin films SDM2022-63 Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech)
  17:45-18:15 ( 30 min. )

Announcement for Speakers
Invited TalkEach speech will have 40 minutes for presentation and 10 minutes for discussion.
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address  


Last modified: 2022-09-28 17:44:41


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